Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping

Abstract

Silicon carbide PIN diodes have been fabricated using a direct-write laserdoping technique that reduces defect generation compared to the conventional ion-implantation technique. Nitrogen and aluminum were successfully incorporated into SiC as n-type and p-type dopants, respectively. Rutherford backscattering studies were conducted to compare the lattice defect generation by the laser-doping and ion-implantation techniques. No amorphization was observed in laser-doped samples, eliminating the need for high-temperature annealing. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the PIN diodes were also investigated. The silicon carbide diodes are intended for high-temperature and high-voltage power electronics applications.

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

“…The activation energy (E emi ) and capture cross-section (σ p ) of the hole trap H1 were determined to be 0.75 eV and 4.67 × 10 −15 cm 2 , respectively, through the Arrhenius relation [30,32] . The σ p by default represents the optical capture cross-section extracted by ODLTS [33] .…”

Characteristics and Applications of Silicon Carbide Power Devices in Power Electronics

“…The common doping techniques used include epilayer doping, ion implantation, laser doping, etc. [27]. Due to its low diffusion coefficient, it is not practical to do thermal diffusion in SiC.…”

“…Several different semiconductor materials are available in the industry [1]- [27]. Silicon has become the most attractive semiconductor material because of its availability and low cost.…”

“…Hence, SiC could be argued as the great grandfather of all semiconductors. SiC has been known for its high physical strength and thermal stability compared to Si, which makes it suitable for high temperature, high voltage, and high power applications [1]- [12], [14]- [27]. Its unique physical structure exhibits high chemical inertness, which enables reliable performance in adverse environments.…”

Ultra-High Temperature Sensors Based on Optical Property

“…8a). A laser doping technique [32][33][34][35] that was developed at UCF for compound semiconductors, such as SiC, was used to fabricate doped chips. The parameters used for the laser doping experiments are presented in Table G3.…”