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Silicon carbide PIN diodes have been fabricated using a direct-write laserdoping technique that reduces defect generation compared to the conventional ion-implantation technique. Nitrogen and aluminum were successfully incorporated into SiC as n-type and p-type dopants, respectively. Rutherford backscattering studies were conducted to compare the lattice defect generation by the laser-doping and ion-implantation techniques. No amorphization was observed in laser-doped samples, eliminating the need for high-temperature annealing. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the PIN diodes were also investigated. The silicon carbide diodes are intended for high-temperature and high-voltage power electronics applications.

Laboratory prototype SiC diodes are fabricated using a combination of gas immersion laser doping (GILD) and laser direct write (LDW) in situ metallization in a commercial SiC wafer. Trimethylaluminum (TMA) and nitrogen are the precursors used to produce p-type and n-type SiC, respectively. Using these techniques, a 150 nm p-type doped junction is fabricated in semiinsulating 6H-SiC and n-doped 4H-SiC wafers. Ohmic contacts are created by laser direct metallization producing carbon rich conductive phases in these doped materials. Alternatively an excimer laser can be used to create silicon rich Schottky contacts. The geometry of the diodes can be vertical or planar to the wafer surface and the laser processes are thought to reduce defect densities in the irradiated areas. These laser-processed diodes are intended for use in high temperature, high voltage and high frequency switching and sensing applications.

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