Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide

Influence of Y2O3 addition on electrical properties of β-SiC ceramics sintered in nitrogen atmosphere

“…18 The present study suggests that Y 2 O 3 doping may be an efficient method of N doping, leading to a subsequent decrease in electrical resistivity. The electrical properties of polycrystalline materials tend to depend heavily on the properties of the contact region between the grains, i.e., grain boundaries.…”

“…However, such N doping in bulk SiC has been difficult due to the low N diffusivity. 18 Recently, highly conductive SiC ceramics were successfully fabricated by hot-pressing SiC powders with yttrium nitrate tetrahydrate (Y(NO 3 ) 3 ·4H 2 O, YN) as a sintering additive. Bulk SiC samples pressed under 40 MPa at 2050 • C for 6 h in nitrogen atmosphere exhibited electrical resistivity as low as 3 × 10 −3 cm at room temperature.…”

Electrical resistivity of silicon carbide ceramics sintered with 1 wt% aluminum nitride and rare earth oxide

“…On the other hand, direct N doping in bulk SiC is known to be difficult due to the low N diffusivity. 43 The RE-Al-Si oxycarbonitride phase helped densify SiC, and upon cooling, a crystalline RE 2 O 3 phase was crystallized from the melt at the junction areas.…”

Silicon carbide white light LEDs for solid-state lighting

“…We observed in laser doping that Cr the concentration at the surface is about two orders of magnitude higher than the solid solubility limit, while for nitrogen it is very close to the reported solubility limit. This ability of laser doping to exceed the solid solubility limit results from creating a nonequilibrium state [21]. These dopant concentration levels and their penetration depth can be further altered easily by modifying the laser doping parameters.…”