SiO 2 -like thin films were deposited at low temperatures ͑Ͻ50°C͒ by atmospheric-pressure plasma-enhanced chemical vapor deposition using a pin-to-plate-type dielectric barrier discharge with a gas mixture containing hexamethyldisilazane ͑HMDS͒/Ar/O 2 . The deposition rate increased with increasing concentration of HMDS in the gas mixture. However, a powdery film with Si-OH bonding, high roughness, and low transmittance was obtained, which was attributed to the enhanced homogeneous reaction with increasing HMDS. The increase in O 2 flow rate at a fixed HMDS flow rate increased the reaction rate of the remaining HMDS on the substrate surface, which resulted in an increase in deposition rate until the remaining HMDS had completely reacted. An increase in the oxygen flow rate also increased the surface roughness and decreased the optical transmittance slightly, possibly due to the formation of small SiO 2 particles in the gas phase during the dissociation of the gas mixture under high-oxygen-percentage conditions. At the optimum condition of HMDS ͑15 sccm͒/O 2 ͑300 sccm͒/Ar ͑2 slm͒, smooth SiO 2 -like thin films with a transmittance Ͼ95% could be obtained with a deposition rate of approximately 21 nm/min.