Characteristics of a photovoltaic X-ray detector based on a GaAs epitaxial structure

Dvoryankin, V. F.; Dvoryankina, G. G.; Dikaev, Yu. M.; Ermakov, M.G.; Ermakova, O.N.; Kudryashov, A. A.; Petrov, A. G.; Telegin, А. V.

doi:10.1134/s1063784207100209

Cited by 2 publications

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“…Such advice should be headed and is normally included as part of the set up of most EDXRF systems, irrespective of the detector material. Although interest continued in GaAs detectors during the review period, [25][26][27] these papers were limited to the fabrication and use of GaAs for X-ray 2D imaging detectors where the stopping power of the GaAs is an advantage but there was no use made of the potential energy dispersive detection from the devices. The potential of diamond as a detector material was reported by De Sio et al, 28 whose focus was mainly on photon counting and extreme radiation hardness in high energy physics and SR applications rather than as useful energy dispersive detectors.…”

Section: Detectorsmentioning

confidence: 99%

Atomic spectrometry update. X-ray fluorescence spectrometry

West

Ellis²,

Kregsamer

et al. 2008

J. Anal. At. Spectrom.

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This annual review of X-ray fluorescence covers developments over the period 2007-2008 in instrumentation and detectors, matrix correction and spectrum analysis procedures, X-ray optics and micro-fluorescence, synchrotron XRF, TXRF, portable XRF and on-line applications as assessed from the published literature. The trend set in previous years continues with an increase in the number of papers published on applications for XRF, including sample preparation, geological, environmental, archaeological, forensic, biological, clinical, thin films, chemical state and speciation studies. Earlier literature has not been ignored in that some of Archimedes oldest writing, previously hidden from sight in a medieval prayer book has now been revealed thanks to the power of modern m-SRXRF. X-ray optics now benefit from the use of poly-capillaries systems, equipment portability has been extended to include the TXRF configuration and readers will find several papers on the use of both two and three dimensional imaging to support environmental, geological and biological studies. The writing team would welcome feedback from readers of this review and invite you to complete the Atomic Spectrometry Updates questionnaire on www.asureviews.org. 9 Applications 9.1 Sample preparation 9.2 Geological and industrial minerals 9.3 Environmental 9.3.1 Aerosols and particulates 9.3.2 Consequences of industrial activity 9.3.3 Other environmental studies 9.4 Archaeological, cultural heritage and forensic 9.5 Industrial 9.6 Clinical and biological 9.7 Thin films and coatings 9.8 Chemical state and speciation 10 Abbrevations 11 References

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Section: Detectorsmentioning

confidence: 99%

Atomic spectrometry update. X-ray fluorescence spectrometry

West

Ellis²,

Kregsamer

et al. 2008

J. Anal. At. Spectrom.

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show abstract

“…Achievements in the creation of X ray detectors based on highly pure gallium arsenide (GaAs) layers grown by homoepitaxy allow this material to be con sidered as one of the most promising for this applica tion [1,2]. These detectors comprise a p-i-n struc ture with an ultrahigh purity n 0 GaAs layer thickness 200 μm and net impurity concentration of N D -N A ≤ 10 13 cm -3 .…”

mentioning

confidence: 99%

GaAs p-i-n structures for X-ray detectors grown on Ge and GaAs substrates

et al. 2012

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Features of the creation of gallium arsenide (GaAs) p-i-n structures on germanium substrates are considered. Optimum regimes for growth of thick GaAs layers by hydride-chloride vapor phase epitaxy (HVPE) on Ge substrates are established, which allow high quality p-i-n structures with characteristics close to those reached by homoepitaxy to be obtained. The spectra of exciton photoluminescence have been measured for ultrahigh purity GaAs layers of various thicknesses grown under differing HVPE conditions.

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Characteristics of a photovoltaic X-ray detector based on a GaAs epitaxial structure

Cited by 2 publications

References 1 publication

Atomic spectrometry update. X-ray fluorescence spectrometry

Atomic spectrometry update. X-ray fluorescence spectrometry

GaAs p-i-n structures for X-ray detectors grown on Ge and GaAs substrates

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