2007
DOI: 10.1116/1.2734978
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Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics

Abstract: In this study, the authors investigated the addition of zirconium (Zr) into HfO2 to improve its dielectric properties. HfxZr1−xO2 films were deposited by atomic-layer deposition at 200–350°C and annealed in a nitrogen ambient environment at 1000°C. Extensive physical characterization of the impact of alloying Zr into HfO2 is studied using vacuum ultraviolet spectroscopy ellipsometry, attenuated total reflectance Fourier transform infrared spectroscopy, secondary-ion mass spectrometry, transmission electron mic… Show more

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Cited by 66 publications
(49 citation statements)
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“…Addition of ZrO 2 to HfO 2 forming HfZrO 4 helps to partially stabilize tetragonal phase being associated with higher k-and lower CET values [7]. Additionally a more uniform film quality, smaller and more uniform grains, a tighter leakage distribution, lower CV hysteresis, less charge trapping, lower D it values, higher transconductance and drive currents, reduced SILC and longer product reliability lifetimes have been reported among other things for HfZrO 4 compared with HfO 2 [7][8][9][10][11]. But on the other hand disadvantages like smaller band gap (~0.4 eV) and lower conduction band offsets resulting in increased leakage have been presented as well [7].…”
Section: Introductionmentioning
confidence: 98%
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“…Addition of ZrO 2 to HfO 2 forming HfZrO 4 helps to partially stabilize tetragonal phase being associated with higher k-and lower CET values [7]. Additionally a more uniform film quality, smaller and more uniform grains, a tighter leakage distribution, lower CV hysteresis, less charge trapping, lower D it values, higher transconductance and drive currents, reduced SILC and longer product reliability lifetimes have been reported among other things for HfZrO 4 compared with HfO 2 [7][8][9][10][11]. But on the other hand disadvantages like smaller band gap (~0.4 eV) and lower conduction band offsets resulting in increased leakage have been presented as well [7].…”
Section: Introductionmentioning
confidence: 98%
“…However, compared to SiO 2 , HfO 2 dielectrics suffer from mobility degradation and charge trapping as well as reliability degradation [5,6]. Recently HfZrO 4 gate dielectrics have been demonstrated to be beneficial compared to HfO 2 [7][8][9][10][11]. Addition of ZrO 2 to HfO 2 forming HfZrO 4 helps to partially stabilize tetragonal phase being associated with higher k-and lower CET values [7].…”
Section: Introductionmentioning
confidence: 99%
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“…The gate dielectric for the metal oxide semiconductor (MOS) transistors characterized in this work were fabricated with atomic layer deposited HfO 2 (3) or Hf x Zr 1-x O 2 (4,5). The Al 2 O 3 capping layers were deposited via atomic layer deposition and the MgO capping layers were deposited by cycling thin layers of sputtered Mg with low pressure, room temperature oxidation.…”
Section: Methodsmentioning
confidence: 99%
“…Rutherford backscattering spectroscopy analysis was performed to determine the composition of Hf x Zr 1−x O 2 alloy and to confirm that film composition does not change significantly after annealing. 9,14,15 Film roughness was measured by atomic force microscopy ͑AFM͒ operated in tapping mode. The root mean square roughness values were calculated on 1 ϫ 1 m 2 images.…”
mentioning
confidence: 99%