Characteristics of BF[sub 2], Ga and In implanted Si after FLA and RTA annealing

Abstract

The dopant diffusion, electrical activation, diode I-V characteristics and damage recovery of BF 2 , Ga and In implanted Si after annealing have been investigated for samples with the peak concentration of 1.0x10 19 cm-3 as p-type dopant atoms. Within this concentration, Ga implanted samples have the low sheet resistance and lowest leakage current in diode I-V with good crystallinity.

Characterization of BF<inf>2</inf>, Ga and in dopants in Si for halo implantation

“…Previously, we reported [3] the dopant diffusion, electrical activation, diode characteristics and damage recovery of BF 2 , Ga and In implanted Si. Diode I-V characteristics indicated that Ga implanted Si showed the good reverse characteristics compared with other dopants.…”