The dopant diffusion, electrical activation, diode I-V characteristics and damage recovery of BF 2 , Ga and In implanted Si after annealing have been investigated for samples with the peak concentration of 1.0x10 19 cm-3 as p-type dopant atoms. Within this concentration, Ga implanted samples have the low sheet resistance and lowest leakage current in diode I-V with good crystallinity.
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