Characteristics of Blue GaN/InGaN Quantum-Well Light-Emitting Transistor

Lan, Hao-Yu; Tseng, I-Chen; Lin, Yung-Hsiang; Chang, Shu‐Wei; Wu, Chao-Hsin

doi:10.1109/led.2019.2955733

Cited by 6 publications

(3 citation statements)

References 15 publications

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“…A design with rotational symmetry is employed to ensure uniform current flow from the emitter to the collector and base. This device structure contrasts sharply with previously-reported III-Nitride [11,12] and III-Arsenide LEBJTs [13][14][15] which are custom-designed and grown specifically for such purposes. While the layer thicknesses and doping concentrations can be tailored for optimized transistor operation in such customized structures, our proposed design facilitate monolithic integration between LEDs and BJTs.…”

Section: Designcontrasting

confidence: 86%

“…An average current gain of 0.054 is evaluated at using the equation ∆I B /∆I C , and averaged across all curves with various values of I B . The current gains with respect to the collector currents I C , are also plotted in figure 2(c), which are lower than the current gains of devices reported in references [11] and [12], where current gains of up to 15 have been achieved. The low current gain of the LEBJT can be attributed to the light generation process with the base current.…”

Section: Resultsmentioning

confidence: 62%

See 1 more Smart Citation

GaN PNP light-emitting bipolar junction transistor

Fu¹,

Choi²

2021

J. Phys. D: Appl. Phys.

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An light-emitting bipolar transistor (LEBJT) has been developed in response to aspirations for on-chip electronics with GaN-based light-emitting diode (LED) devices. The design utilizes the existing p-n junction of an LED structure to construct a PNP bipolar junction transistor comprising two back-to-back p-n junctions, saving the need for customized structures or epitaxial regrowth. Two designs of monolithic GaN LEBJTs have been demonstrated in this work—an LEBJT with a larger emitter area size for conversion of electronic to optical signal, as well as an LEBJT with reduced emitter area for boosting of current gain. Employing an emitter comprising an array of nanopillars patterned by nanosphere lithography, the LEBJT exhibits an average current gain of 20 and a bandwidth of 180 MHz.

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Section: Designcontrasting

confidence: 86%

Section: Resultsmentioning

confidence: 62%

GaN PNP light-emitting bipolar junction transistor

Fu¹,

Choi²

2021

J. Phys. D: Appl. Phys.

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“…Third, the single-mask process may help improve the interconnection density and yield of GaN-based integrated circuits (ICs) in the future. Recently, GaN-based complementary logic and light-emitting bipolar junction transistors were demonstrated [18][19][20]. GaN-based ICs are expected to be widely used in power electronics and other areas.…”

Section: Introductionmentioning

confidence: 99%

Ag nanodot/Mg/Al reflective Ohmic contacts simultaneously suitable for n-type and p-type GaN

Jiang

Zhou

Guo

et al. 2023

J. Phys. D: Appl. Phys.

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This work reports on high-reflectivity Ag nanodot (AgND)/Mg/Al Ohmic contacts suitable for both p-GaN and n-GaN. The lowest specific contact resistances are found to be 2.25×10-2 Ω·cm2 on p-GaN and 2.56×10-5 Ω·cm2 on n-GaN. Ag was deposited and converted into AgNDs by annealing, and Mg/Al was then deposited. A second annealing process at different temperatures was performed to check the thermal stability of the contacts. Both the p-GaN and n-GaN contacts were Ohmic after annealing at 300 °C or below. The AgND/Mg/Al contacts annealed at 250 °C or less showed a reflectivity of over 91% for wavelengths from 400 to 550 nm. XPS and XRD measurements were performed to investigate the contact mechanisms. We propose that in AgND/Mg/Al on p-GaN, the effective barrier is lowered due to the presence of an Ag2O intermedia layer and the tunneling effect enables Ohmic contact. When the annealing temperature is 350 °C or higher, the Ag2O changes to β-AgGaO2 or is decomposed and the height and width of the barrier for holes increase, which causes the Ohmic contact to deteriorate. The Ohmic behavior of AgND/Mg/Al contacts on n-GaN is assumed to be mainly due to the high direct coverage ratio of Mg and the good Ohmic contact behavior of Mg/n-GaN. These results show that AgND/Mg/Al Ohmic contacts can be fabricated simultaneously on both p-GaN and n-GaN, which is a possible solution for improving the density of both GaN-based ICs and micro-LEDs. This contact scheme can also improve the light output efficiency of GaN-based LEDs.

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A Monolithically Integrated GaN-Based Light Emitting Transistor with a High On/Off Ratio and Low Gate Leakage Current

Kim,

Yun

2024

ACS Appl. Electron. Mater.

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This study presents a trench structured gallium nitride (GaN)-based light emitting transistor (LET) that integrates the functionalities of both a transistor and a light emitting diode into a single compact unit. Utilizing the superior material properties of GaN, these items surpass the performance of their silicon-or organic-based counterparts. However, due to polarization effects caused by the wurtzite crystal structure of GaN, the LET operates in depletion mode (D-mode). A metal-insulatorsemiconductor gate was employed in the deep trench to mitigate prevalent issues such as poor gate controllability and high offcurrent in GaN-based devices. This work outlines the integrated device concept, operational mechanism, and fabrication process details and discusses the results of the characteristic assessment. The epitaxial wafer structure was optimized to enhance light emission, yielding a device capable of switching with an on/off ratio of approximately 10 7 and emitting visible blue light through a multi-quantum well layer, fabricated using state-of-the-art semiconductor fabrication technology.

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Characteristics of Blue GaN/InGaN Quantum-Well Light-Emitting Transistor

Cited by 6 publications

References 15 publications

GaN PNP light-emitting bipolar junction transistor

GaN PNP light-emitting bipolar junction transistor

Ag nanodot/Mg/Al reflective Ohmic contacts simultaneously suitable for n-type and p-type GaN

A Monolithically Integrated GaN-Based Light Emitting Transistor with a High On/Off Ratio and Low Gate Leakage Current

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