Characteristics of conductive SrRuO₃ thin films with different microstructures

Abstract

Conductive SrRuO 3 thin films were epitaxially grown on (100) LaAlO 3 substrates by pulsed laser deposition over a temperature range from 650 ± C to 825 ± C. Well-textured films exhibiting a strong orientation relationship to the underlying substrate could be obtained at a deposition temperature as low as 450 ± C. The degree of crystallinity of the films improved with increasing deposition temperature as confirmed by x-ray diffraction, transmission electron microscopy, and scanning tunneling microscopy. Scanning electron microscopy revealed no particulates on the film surface. The resistivity of the SrRuO 3 thin films was found to be a strong function of the crystallinity of the film and hence the substrate temperature during film deposition. A residual resistivity ratio (RRR r 300 K ͞r 4.2 K ) of more than 8 was obtained for the SrRuO 3 thin films deposited under optimized processing conditions.

Epitaxial SrRuO3 Thin Films Deposited on SrO buffered-Si(001) Substrates for Ferroelectric Pb(Zr0.2Ti0.8)O3 Thin Films

“…On the other hand, above 6nm thickness, SrRuO 3 films exhibit a low rms roughness of about 3-5 Å and a resistivity of 1700 -1900 μΩ-cm. The resistivity values of the SrRuO 3 films deposited on 6nm-thick SrO buffer layers are approximately 1700 μΩ-cm, higher than that of SrRuO 3 films (~ 400 μΩ-cm) deposited on SrTiO 3 single crystals [13] and (100) LaAlO 3 single crystals [14]. The high resistivity of the SrRuO 3 films on Si substrates originates from the existence of silicon oxide formed from the diffusion of silicon, because the thin SrO layer does not prevent the diffusion of silicon during the deposition of SrRuO 3 at high temperature.…”

“…Published online 14 Ferroelectric materials exhibit a wide spectrum of functional properties, including switchable polarization, piezoelectricity, high non-linear optical activity, pyroelectricity, and non-linear dielectric behaviour. These properties are crucial for application in electronic devices such as sensors, microactuators, infrared detectors, microwave phase filters and, non-volatile memories.…”

Enhanced magnetization in epitaxial SrRuO3 thin films via substrate-induced strain

“…Film residual resistivity ratios ranged in value from 4-5, well within the typical range for previous high-quality epitaxial SRO films. [14,15] Additionally, resistivity scaled well with film thickness, thus indicating that the electronic properties are not dominated by surface or interface effects.…”

Evidence for pseudo‐gap behavior in defect‐doped infinite layer (Ca, Sr)CuO2 thin films

“…Evidence for an energy gap in the normal state excitation spectrum of underdoped HTS compounds has been observed in angle-resolved photoemission [32]. However, it is important to note that a similar behavior in resistivity has been observed in highly-defective SrRuO 3 films [33]. Note also that the conductivity of 90 Ω -1 cm -1 that yields a positive coefficient of resistance agrees with the Mott criterion of minimum metallic conductivity assuming a mean free path on the order of 1 -2 nm.…”