2009
DOI: 10.1149/1.3068358
|View full text |Cite
|
Sign up to set email alerts
|

Characteristics of Cost-Effective Ultrathin HfTiO[sub x] Film as Sensitive Membrane in ISFET Fabricated by Anodization

Abstract: A cost-effective technique was introduced to prepare hafnium-titanium dioxide thin film, which was fabricated by anodic oxidation (anodization) of stacked Hf and Ti metals at room temperature in deionized water. Using the anodization method, the linearity of HfTinormalOx -gate ion-sensitive field-effect transistor (ISFET) was excellent between the pH 2 and 10 range. In addition, capacitor structure is prepared to characterize the capacitance-voltage (C-V) and current-voltage (I-V) curves using high-freque… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
2
0

Year Published

2010
2010
2022
2022

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(2 citation statements)
references
References 19 publications
0
2
0
Order By: Relevance
“…One of the most popular and intensively studied multifunctional perovskite‐oxide materials is barium strontium titanate 18. In previous experiments, the BST films have been applied for the detection of humidity 19, 20, for the detection of hydrogen 21 and ammonia gas 22 or for the development of single sensors sensitive to pH 23, 24.…”
Section: Introductionmentioning
confidence: 99%
“…One of the most popular and intensively studied multifunctional perovskite‐oxide materials is barium strontium titanate 18. In previous experiments, the BST films have been applied for the detection of humidity 19, 20, for the detection of hydrogen 21 and ammonia gas 22 or for the development of single sensors sensitive to pH 23, 24.…”
Section: Introductionmentioning
confidence: 99%
“…[12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28]37 The first one focus on the sensing membrane. The various sensing membrane materials, [12][13][14][15][16][17][18] such as Si 3 N 4 , metal oxides, and polymers or different gate [19][20][21][22][23] treatment methods have been widely investigated or self-assembled monolayers (SAMs), such as APTES (3-aminopropyltriethoxysilane), have also been studied as the sensing membrane of ISFETs. [24][25][26][27] The second way was using patterned structures.…”
mentioning
confidence: 99%