Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In Ga As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

In this report, Bovine Serum Albumin-based Metal–Insulator–Metal structures on Indium doped Tin Oxide coated flexible Polyethylene Terephthalate substrates with Aluminum (Al) as the top electrode have been fabricated and studied in detail. The thickness of the film was measured using a Field Emission Scanning Electron Microscope. The Fourier Transform Infrared Attenuated Total Reflectance spectrum confirms the presence of both amide-I and amide-II in the protein film. Ultraviolet-Visible Spectroscopy was performed for the absorption spectrum used to extract the optical bandgap. The surface roughness of the film was estimated by Atomic Force Microscopy. Electrical characterization of the devices gives a high capacitance density with a negative quadratic coefficient and a low dissipation factor, showing their potential for Radio Frequency/analog application. The number of dipoles (NPD) is found to be 1.01 × 1018 cm−3 with a permanent dipole moment (μ0) of 2.92 × 10−25 C m at an applied frequency of 1 MHz. The devices show high reliability resistant to degradation, studied by Constant Voltage Stressing. We also examined the performance of these flexible devices by repeated bending with different bending radii.

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The excessive usage and demand of consumer electronics have caused an elevation of electronic waste. Typically, consumer electronics are produced with non-biodegradable, non-biostable, and sometimes fatal materials, resulting in global alarming biological summons. Thence, to mend the drawbacks, an emerging field—named transient electronics—takes effect where the biomaterial, device, substrate, and total systems disappear untraceably after steady-state operation. Conspicuously, transient electronics have induced immense curiosity in researchers to perform interesting investigations due to the feature of disintegration after stable operation. The idea of transient electronics has been implemented in biomedical, military, and nanotechnology fields. Although rapid development is evident in transient technology in a short period, it is believed that the technology will deliver the utmost prospects in advanced electronic applications. Essentially, in transient technology, the vital challenge is to determine the platform materials that offer stability, resistance, biocompatibility, and mainly, the solubility to accommodate the transient devices. In this Review, a detailed overview of different soluble substrates, such as organic, polymer, and solid-state substrates, is described, along with the feasibility of the fabricated devices on the respective substrates to support transient electronics. Second, the dissolving mechanism of the corresponding substrates is analyzed.