Flexible BSA MIM capacitor with negative voltage coefficient for RF applications

Abstract

In this report, Bovine Serum Albumin-based Metal–Insulator–Metal structures on Indium doped Tin Oxide coated flexible Polyethylene Terephthalate substrates with Aluminum (Al) as the top electrode have been fabricated and studied in detail. The thickness of the film was measured using a Field Emission Scanning Electron Microscope. The Fourier Transform Infrared Attenuated Total Reflectance spectrum confirms the presence of both amide-I and amide-II in the protein film. Ultraviolet-Visible Spectroscopy was performed for the absorption spectrum used to extract the optical bandgap. The surface roughness of the film was estimated by Atomic Force Microscopy. Electrical characterization of the devices gives a high capacitance density with a negative quadratic coefficient and a low dissipation factor, showing their potential for Radio Frequency/analog application. The number of dipoles (NPD) is found to be 1.01 × 1018 cm−3 with a permanent dipole moment (μ0) of 2.92 × 10−25 C m at an applied frequency of 1 MHz. The devices show high reliability resistant to degradation, studied by Constant Voltage Stressing. We also examined the performance of these flexible devices by repeated bending with different bending radii.

Fabrication of Highly Transparent Substrates from Waste Materials for Electronic Device Applications

“…The CV characteristics show frequency dispersion, which is similar to the nature observed in general MIM structures. 73 The leakage current density of the device is shown in the inset of Figure 6(e). A leakage current density of 1.15 μA/cm 2 at 1 V was observed, which facilitated a good contact formation on the substrate.…”

“…However, at high frequencies, the capacitance and conductance values are close to the ideal values, as the traps fail to follow the AC signal at high frequencies. Table 4 compares the electrical properties of the BSA-based MIM structure fabricated on PET/ITO 73 with the MIM device fabricated on BPS.…”

“…The capacitance density was found to be 1.05 fF/μm 2 at an applied frequency of 1 MHz. The CV characteristics show frequency dispersion, which is similar to the nature observed in general MIM structures . The leakage current density of the device is shown in the inset of Figure (e).…”

“…compares the electrical properties of the BSA-based MIM structure fabricated on PET/ITO73 with the MIM device fabricated on BPS.…”

Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films

“…In recent years, MIM capacitors have been widely applied in various electronics, such as dynamic random-access memory (DRAM), flexible electronics [1], super-capacitor, and micro-electro-mechanical systems (MEMS) resonators [2]. In order to meet the miniaturization and high integration of devices, a higher capacitance density is required [2,3].…”