Tuning of transport properties of the double-step chemical bath deposition grown zinc oxide (ZnO) nanowires by controlled annealing: An approach to generate p-type ZnO nanowires

A highly efficient bilayer graphene/ZnO/silicon nanowire based heterojunction photodetector with broadband spectral response

“…On the other hand, for Device II and III, the electrical equivalent circuit consists of an individual NW connected with two asymmetric back-to-back heterojunction diodes on the top and bottom surface as shown in figures 1(b) and (c), respectively. Based on the previous experimental and theoretical reports [5,15,18,22,24,[29][30][31][32][33][34][35][36][37][38], table 1 lists the optimized parameters including affinity (χ), relative permittivity (ε r ), intrinsic carrier concentration (n i ), the effective density of states for electrons (N CB ) and holes (N VB ) in the conduction and valence bands, respectively, carrier lifetime and mobility utilized for the computer simulation of the proposed devices. Since the holes in BLG have higher effective mass than the electrons [39] and thus hole mobility of p + -BLG is always smaller than that for electrons.…”

“…Additionally, the resistivity of the material decreases as the doping concentration increases [31], resulting in the reduced performance of the device. Based on the previous studies [15,16,22,24,33,34], the optimized acceptor concentration (N A ) and donor concentration (N D ) of the present study is reported in table 1. The optoelectronic characteristics of all the devices are analyzed at 300 K by considering the continuity, carrier transport diffusion, and Poisson equations based on the Boltzmann's transport model with optimized boundary conditions [30].…”

An easy-to-fabricate source measure unit for real-time DC and time-varying characterization of multi-terminal semiconductor devices

“…Generally, the electrical transport characterization is conducted in direct current (DC) mode by applying a bias voltage across the device and measuring its current flow. Such current-voltage (I-V) characteristics of devices are essential to draw a comprehensive understanding of its junction properties, interface defects, efficiencies, life-time, and other relevant device properties [2][3][4]. The bipolar or bidirectional I-V characterization technique where the bias voltage is swept from negative to a positive potential and viceversa provides vital information regarding the nature of the measuring devices such as a resistor, diode, photodiode, and especially resistive memory device [2,5,6].…”

Evaluation of the crystalline structure of Ag+-doped ZnO thin film treated with selected annealing temperatures

“…10) In addition, the suitable annealing temperature of doped ZnO thin film aids the formation of acceptor levels and improves its electron mobility. 11,12) In the present article, we report the synthesis of Ag + -doped ZnO thin film by a two-step synthesis method. The seed ZnO layer was synthesized by the mist atomization method followed by the solution immersion method for the upper layer of Ag + -doped ZnO.…”