Characteristics of Elliptical Gate-All-Around SONOS Nanowire With Effective Circular Radius

Lee, Myoung-Sun; Park, Byung‐Gook; Cho, Il Hwan; Lee, Jong-Ho

doi:10.1109/led.2012.2215303

Cited by 6 publications

(4 citation statements)

References 6 publications

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“…8 b,c considering the dominancy of either channel MD of EOEC structure or T OX of EOCC structures. However, the device having channel MD of 18 nm of COEC structure shows that the carriers are accumulating below the major axis where T OX is fixed at 2 nm 17 , 32 . The vertical electric field penetrates more with decreasing channel MD of EOEC structure resulting in an increase in its carrier density 33 as depicted in Fig.…”

Section: Resultsmentioning

confidence: 96%

“…The steps involved in the fabrication of the vertical GAA structure involve several etching, deposition, and growing processes, which generally form an uneven radius rather than the ideal circular GAA structure 10 , 11 . Because of this uneven radius, predicting the performance of fabricated GAA device structures is difficult 12 , 13 , and only a few reports for its acceptable variations 14 – 17 are available. Most of the reports only address one type of geometry and are of mostly MOSFET devices, as the report 12 shows the impact of hydrogen annealing on the device diameter of GAA MOSFET devices, which led to the elliptical circumference having an ON current of 825 µA/µm, report 13 shows the fabricated GAA MOSFET device having an elliptical shape (i.e., EOEC geometry) having ON current of 976 µA/µm, report 15 demonstrate the impact of varying channel length on fabricated elliptical GAA MOSFETs, report 14 demonstrates numerical analysis on three different types of variations such as t si fluctuation, elliptical shape fluctuations (i.e., EOEC fluctuations), and corner rounding fluctuations where the acceptable tolerance for RF IC design is analyzed as Δt si < 1 nm and r/R > 75%, and the report 16 mathematically analyzed the short-channel-effects of elliptical GAA MOSFET (i.e., EOEC structure) by varying its effective radius.…”

Section: Introductionmentioning

confidence: 99%

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Analog and RF performance optimization for gate all around tunnel FET using broken-gap material

Kumar

Koley

Mech

et al. 2022

Sci Rep

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Many times, the fabricated cylindrical gate-all-around tunnel FET (GAA TFET) has an uneven radius due to several etching and deposition processes involved while fabricating the device, which show notable variations in the performance of the device. In this report, III–V uneven GAA TFET is studied by considering the uneven radius as elliptical in shape for all possible variations, which shows a significant impact on analog and RF figure of merits (FOMs). The performance of the optimized devices is compared with their circular structure and with their maximum deviation in elliptical geometry for all possible variations in device channel and gate oxide. The variations in its device channel and gate oxide have shown a significant impact on the performance of the device. The analog and RF FOMs are studied, including the transconductance generation factor (gm/IDS), intrinsic gain (gmRO), capacitances (CGS, CGD), cut-off frequency (fT), and gate delay (τm).

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Analog and RF performance optimization for gate all around tunnel FET using broken-gap material

Kumar

Koley

Mech

et al. 2022

Sci Rep

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“…The impact of geometrical AR has been investigated previously in a few devices like SONOS [21] and gate all around (GAA) MOSFET [22], where it showed a significant impact on their electrical characteristics. Besides, the previous study [23] investigated the impact of non-ideal elliptical devices on the performance of CMOS digital and analog circuits.…”

Section: = ( ) Ar Major Axis Minor Axismentioning

confidence: 99%

“…Instead, the real devices tend to have elliptical cross-sections with a different geometrical aspect ratio (AR) [19,20]. The AR is defined as the ratio of the length of the major axis to that of the minor axis [21,22], i.e.,…”

Section: Introductionmentioning

confidence: 99%

Impact of process-induced ellipticity on the RESET process of cylindrical phase change memory devices

Durai¹,

Devi²,

Raj³

et al. 2022

Phys. Scr.

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Phase change memory (PCM) is one of the promising candidates for the next-generation high-speed non-volatile memory which exhibits excellent scalability. The cylindrical-type PCM devices entering the nano-scale regime should show their tolerance to the variation in the manufacturing process. However, it is highly challenging to fabricate the cylindrical-type nano-scale devices ideally with circular cross-sections. In general, the degree of variation in circular cross-section is dictated by a geometrical parameter called aspect ratio (AR). In this study, the impact of variation in AR of heater (ARheater) and active material, Ge2Sb2Te5 (ARGST) on the RESET programming of the mushroom-type cylindrical PCM device is systematically investigated by using 3D TCAD simulations. The simulation results reveal that the RESET current (IRESET) of the reference device (100 nm heater diameter) consisting of elliptical cross-sections increases significantly to ~67% when ARheater = 2 and 1 ≤ ARGST ≤ 2, whereas for the scaled-down devices of 20 nm and 10 nm heater diameter with elliptical cross-sections, the IRESET increases to ~35% and ~38% when ARheater = 2 and ARGST = 1, and further IRESET increases to ~54% and ~63% when ARheater = 2 and ARGST = 2 leading to high-power RESET programming. In the case of the reference device, the ARGST did not play any significant role on IRESET. However, in the scaled-down device, both ARheater and ARGST significantly affect the IRESET. Furthermore, the device employing a vertically-oriented elliptical heater and horizontally-oriented elliptical GST (where ARheater = 2 and ARGST = 0.5) shows the peculiar re-amorphization among all the cases considered in this study. Hence, the miniaturized cylindrical PCM devices comprising elliptical cross-sections due to process-induced variability requires an accurate understanding of the programming characteristics for reliable modeling and simulations.

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Quantitative analysis of irregular channel shape effects on charge-trapping efficiency using massive 3D NAND data

Park

Yoon

Nam

et al. 2023

Materials Science in Semiconductor Processing

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Characteristics of Elliptical Gate-All-Around SONOS Nanowire With Effective Circular Radius

Cited by 6 publications

References 6 publications

Analog and RF performance optimization for gate all around tunnel FET using broken-gap material

Analog and RF performance optimization for gate all around tunnel FET using broken-gap material

Impact of process-induced ellipticity on the RESET process of cylindrical phase change memory devices

Quantitative analysis of irregular channel shape effects on charge-trapping efficiency using massive 3D NAND data

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