Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

Abstract

Pseudomorphic four-period GaAs 0.978 N 0.022 / GaAs 0.78 Sb 0.22 type-II multiquantum well structures were grown on ͑100͒ GaAs substrates by metalorganic vapor phase epitaxy at 530°C. The GaAs 0.978 N 0.022 layers were grown at a V/III ratio of 685 and N / V ratio of 0.96, whereas the GaAs 0.78 Sb 0.22 was grown at a V/III ratio of 3.8 and Sb/ V ratio of 0.8. The superlattice peaks in the x-ray diffraction -2 scans around the ͑400͒ GaAs peak were fitted using a dynamical simulation model to determine layer thickness and alloy compositions. The GaAsN and GaAsSb thicknesses were ϳ8 nm and ϳ5 nm, respectively. The photoluminescence ͑PL͒ spectra were obtained at 30 K and the PL peak energy was found to match the type-II transition energy obtained from a 10-band k · p model. Postgrowth annealing under arsine-H 2 with a N 2 cooldown was found to increase the low temperature PL intensity and result in the appearance of luminescence at room temperature.

Growth of strained GaAs1−ySby and GaAs1−y−zSbyNz quantum wells on InP substrates

“…4(b)), presumably a result of increased N content and is indicative of increased non-radiative recombination. As in other dilute-nitride material systems [1,2,[30][31][32], an improvement of the PL intensity could perhaps be achieved through thermal annealing. The influence of the U-DMHy gas-phase mole fraction was investigated wherein all the growth conditions for two sets of samples, D-G and H-I, were held constant, as indicated in Table 1, except for the U-DMHy mole fraction.…”

Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1−ySby films grown via metalorganic vapor phase epitaxy

“…x Ga 1Àx As 1Àz N z layers have resulted in photoluminescence (PL) emission wavelengths between 1.4 and 1.6 mm [11][12][13][14]. The PL emission wavelengths and efficiency of these type-II structures can be extended by increasing the Sbmole fraction in the GaAs 1Ày Sb y layers.…”

A variationally computed room temperature line list for AsH3

“…Arsene is also important for industrial applications as high purity arsine is widely used in the semiconductor manufacturing industry, for example, in processing GaAs surfaces [5][6][7] . Given its highly poisonous nature, with an exposure limit value of 50 ppb mole-concentration 8 , the detection of AsH 3 escape at such levels is an important safety requirement in this industry 9 .…”