Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1−ySby films grown via metalorganic vapor phase epitaxy

Khandekar, A. A.; Yeh, Jeng-Ya; Mawst, Luke J.; Song, Xueyan; Babcock, S.E.; Kuech, T. F.

doi:10.1016/j.jcrysgro.2006.12.034

Cited by 15 publications

(13 citation statements)

References 51 publications

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“…Above this temperature, an abrupt decay was observed with a complete depletion starting at 450°C. The thermolysis of Sb 2 Me 4 was associated with the detection of SbMe 3 as dominant product, in terms of signal intensity, and SbMe as shown in Figure 2b. Figure 2c shows that SbMe 2 signal can be fitted with a sum of a decay component at 300°C, corresponding to the precursor molecule, and to a peak with a maximum above 400°C, which corresponds to the formation of SbMe 3 .…”

Section: Tetramethyldistibinementioning

confidence: 95%

“…The detection of SbMe 3 and SbMe molecules in the gas phase suggests the occurrence of an intramolecular disproportionation reaction as presented in Scheme 1. The activation energy of this reaction was estimated at (163 Ϯ 4) kJ/mol from the decay of the molecular peak when assuming a first-order kinetics with A ϭ 10 13 s Ϫ1 as the preexponential factor.…”

Section: Tetramethyldistibinementioning

confidence: 97%

“…A ntimony-containing compounds are extensively investigated as thermoelectric [1,2], lasing [3], photo-detecting [4], magnetic [5,6], and transparent electrode [7] materials for a wide range of applications. Most of the antimony-containing materials possess metastable compositions that impose low processing temperatures.…”

mentioning

confidence: 99%

“…Chemical vapor deposition (CVD) is considered as a nearly ideal, low-cost, and high throughput approach for device manufacturing; however, its application here is hindered by the lack of suitable, low-temperature antimony precursors [8]. Standard antimony precursors including SbMe 3 and SbEt 3 exhibit high thermal stability, which complicates the growth of materials such as InSb [9,10].These precursors were therefore judged not suitable as controllable antimony sources because of their strong Sb--C bond [11,12]. The strength of the Sb-C bond was found to decrease with increasing ligand size [13], although the extremely low volatility of the resulting molecules represents a significant drawback [14].…”

mentioning

confidence: 99%

“…[8] as a suitable carbon-free antimony source that allows deposition of antimony films at temperatures as low as 200°C. SbD 3 shows an enhanced stability compared to that of SbH 3 at 23°C, which allows its implementation as a CVD precursor [8]. Tetramethyl-and tetraethyldistibine (Sb 2Me4 and Sb 2Et4) were also investigated as alternative precursors [11,12,15].…”

mentioning

confidence: 99%

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Low-temperature thermolysis behavior of tetramethyl- and tetraethyldistibines

Bahlawane

Reilmann

Schulz

et al. 2008

J. Am. Soc. Mass Spectrom.

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The thermolysis behavior of tetramethyl-and tetraethyldistibine (Sb2Me4 and Sb 2Et4) was investigated using a mass spectrometer coupled to a tubular flow reactor under near-chemical vapor deposition (CVD) conditions. Sb 2Me4 undergoes a gas-phase disproportionation with an estimated activation energy of 163 kJlmo1. This reaction leads to the formation of methylstibinidine, SbMe, that reacts on the surface to produce antimony film and SbMe 3 . Unfortunately, this clean decomposition pathway is limited to a narrow temperature range of 300-350 "C. At temperatures exceeding 400°C, SbMe 3 decomposes following a radical route with a consequent risk of carbon contamination. In contrast, Sb 2Et 4 disproportionates at the hot wall of the reactor. According to mass-spectrometric data, this reaction is significant starting at a temperature of 100°C, with an apparent activation energy of 104 kJ/mol. Within the temperature range of 100-250°C, the precursor decomposition leads to the formation of antimony films and SbEt 3 , whereas different molecular reaction pathways are significantly activated above 250°C. The use of Sb 2Et 4 lowers the risk of carbon contamination compared to Sb 2Me4 at high temperature. Therefore, Sb 2Et 4 is a promising CVD precursor for the growth of antimony films in the absence of hydrogen atmosphere in a wide temperature range. [5,6], and transparent electrode [7] materials for a wide range of applications. Most of the antimony-containing materials possess metastable compositions that impose low processing temperatures. Chemical vapor deposition (CVD) is considered as a nearly ideal, low-cost, and high throughput approach for device manufacturing; however, its application here is hindered by the lack of suitable, low-temperature antimony precursors [8]. Standard antimony precursors including SbMe 3 and SbEt 3 exhibit high thermal stability, which complicates the growth of materials such as InSb [9,10].These precursors were therefore judged not suitable as controllable antimony sources because of their strong Sb--C bond [11,12]. The strength of the Sb-C bond was found to decrease with increasing ligand size [13], although the extremely low volatility of the resulting molecules represents a significant drawback [14]. Deuterated stibine (SbD 3 ) was proposed by Todd et a1.[8] as a suitable carbon-free antimony source that allows deposition of antimony films at temperatures as low as 200°C. SbD 3 shows an enhanced stability compared to that of SbH 3 at 23°C, which allows its implementation as a CVD Address reprint requests to Dr. Naoufal

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Section: Tetramethyldistibinementioning

confidence: 95%

Section: Tetramethyldistibinementioning

confidence: 97%