2011
DOI: 10.4028/www.scientific.net/amr.306-307.185
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Characteristics of Gamma–Ray Irradiated Pentacene Organic Thin Film Field Effect Transistors

Abstract: P-channel pentacene field effect transistorswith a Si/SiO2/pentacene/Au structure were fabricated, and were gamma-ray irradiated with a Co60source. The changes of the drain current IDvs. source/drain voltage VSD(ID- VSD) characteristics were measured after every 200 Gy in silicon (GySi) irradiations up to the total dose of 1200 GySi. The drain current IDcontinuously decreased to less than 10 % of that before irradiation after 1200 GySiirradiation. The threshold voltage Vthcontinuously decreased up to 800 GySi,… Show more

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Cited by 4 publications
(2 citation statements)
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“…This result is consistent with the other reported works, in which mobility decreased aer irradiation. 11,24,26 In this work, the resistivity decreases (Fig. 4(c)) together with the mobility (Fig.…”
Section: Resultssupporting
confidence: 49%
See 1 more Smart Citation
“…This result is consistent with the other reported works, in which mobility decreased aer irradiation. 11,24,26 In this work, the resistivity decreases (Fig. 4(c)) together with the mobility (Fig.…”
Section: Resultssupporting
confidence: 49%
“…Until now, most reports provide an overview of radiation effects on the electronic transport properties of pentacene thin lm. [23][24][25][26] Moreover, the scope of our work is unique, since we analyzed the effects of girradiation at different dose levels among p and s bonds existing in the molecule. Pentacene thin lm is a layered structured material and anisotropic studies on such type of material lead to a better understanding of the irradiation effects on the molecular level along in-plane and plane normal directions.…”
Section: Introductionmentioning
confidence: 99%