Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric

“…Fortunately, using high-dielectric-constant (high-) materials to replace SiO2 as gate layer can simultaneously enable a low leakage current and a low-voltage operation. Various high-materials, e.g., Y2O3 4 , Al2O3, 9,10 HfO2, 2,11 Ta2O5, 12 HoTiO3, 13 HfLaO, 14,15 LaLuO3, 16 LaAlO3, 17 have been reported for a-IGZO TFTs. However, for high-materials, there is a general phenomenon that the band gap decreases with the increase of the value.…”

Design of a voltage‐programmed V TH compensating pixel circuit for AMOLED displays using diode‐connected a‐IGZO TFT

“…Out of all these oxide TFTs, amorphous‐indium–gallium–zinc oxide (a‐IGZO) TFTs have gained considerable traction because of the presence of several sought after properties like transparency [6], high electron mobility, good uniformity, high on‐to‐off current ratio, sharp threshold swing and low processing temperature [7]. Some fabrication techniques for high‐performance a‐IGZO TFTs have also been proposed like deposition using atmospheric pressure plasma jet [8, 9] etc. However, threshold voltage instability under gate bias stress still remains an issue for a‐IGZO pixel circuits resulting in OLED current degradation with time, thus limiting the lifetime of the OLED panel.…”

High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

“…In the last few years, photo-modulated thin-film transistors (TFTs) have found widespread applications in photo-sensitive materials [ 1 – 3 ] such as in the electronic and electro-optic components. For applications in integrated circuit [ 4 , 5 ], amorphous metal oxide semiconductor (AMOS)-based TFTs have been utilized in phototransistors and photo-sensors due to their high sensitivity, electron mobility, and on/off ratio.…”