Characteristics of InAs/GaSb Line-Tunneling FETs With Buried Drain Technique

Lu, Bin; Cui, Yan; Guo, Aixin; Wang, Dawei; Lv, Zhijun; Zhou, Jiuren; Miao, Yuyang

doi:10.1109/ted.2021.3059391

Cited by 12 publications

(5 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1,4] The vertically stacked 2D/3D heterostructure is an important guarantee for the realization of the facetunneling mechanism, which greatly increases the effective tunneling area and enhances the gate control over the tunnel junction. [4][5][6] Therefore, the higher I ON and the steeper SS are obtained compared with the traditional point-tunneling mechanism. Consequently, steep subthreshold swing, large on-state current, and small off-state current can be obtained simultaneously in the 2D/3D TFETs.…”

Section: Introductionmentioning

confidence: 99%

“…[2,4] Meanwhile, the pristine interface of the 2D/3D heterostructure due to the dangling-bond-free interface of the 2D material significantly suppresses the trap-assisted tunneling process (TAT) induced by interface traps, which is a Gordian knot of III-V heterojunction TFETs and leads to the relatively high off-state current (I OFF ) and subthreshold swing (SS). [5,6] Moreover, the atomically thin channel enhances the electrostatic control over the entire tunneling junction for ultrasteep subthreshold switching. [4] Due to the existence of the van der Waals gap at the interface, the ultrasharp doping profile is available for the 2D/3D tunnel heterostructure, which improves the tunneling efficiency and increases the on-state current (I ON ).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

MoS₂/Si tunnel diodes based on comprehensive transfer technique

Zhu¹,

Lv²,

Zhang³

et al. 2023

Chinese Phys. B

Self Cite

View full text Add to dashboard Cite

Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D TFET is considered as one of the most promising low-power devices that can simultaneously obtain low OFF-state current (I OFF), high ON-state current (I ON) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabricating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the deformation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by AFM, SEM, and Raman characterizations. Besides, the prominent NDR effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

MoS₂/Si tunnel diodes based on comprehensive transfer technique

Zhu¹,

Lv²,

Zhang³

et al. 2023

Chinese Phys. B

Self Cite

View full text Add to dashboard Cite

show abstract

“…Consequently, this presents a significant obstacle to further advancement in information density and circuit performance. Although steep slope devices, such as negative-capacitance FETs (NCFETs) [5][6][7][8][9] and tunneling FETs (TFETs) [10][11][12][13][14], can mitigate this issue, the number of bits is inherently smaller than the number of gates in a binary Boolean logic system [2].…”

Section: Introductionmentioning

confidence: 99%

A Ternary Inverter Based on Hybrid Conduction Mechanism of Band-to-Band Tunneling and Drift-Diffusion Process

Lu,

Ma,

Wang

et al. 2024

Micromachines

Self Cite

View full text Add to dashboard Cite

In this paper, a novel transistor based on a hybrid conduction mechanism of band-to-band tunneling and drift-diffusion is proposed and investigated with the aid of TCAD tools. Besides the on and off states, the proposed device presents an additional intermediate state between the on and off states. Based on the tri-state behavior of the proposed TDFET (tunneling and drift-diffusion field-effect transistor), a ternary inverter is designed and its operation principle is studied in detail. It was found that this device achieves ternary logic with only two components, and its structure is simple. In addition, the influence of the supply voltage and the key device parameters are also investigated.

show abstract

“…The conventional TFET faces three challenges: (1) TAT effect; (2) high thermal budget; and (3) low ON-state current. To overcome these limitations, various solutions have been proposed in many papers, such as heavily doped Gaussian drain regions [ 9 ], multiple gates [ 10 – 13 ], pocket structures [ 14 ], heterostructures formed using small bandgap materials [ 15 – 19 ], the high electron mobility characteristics of III–V materials [ 20 , 21 ], ferroelectric material NC-TFET [ 22 ], or more novel two-dimensional materials [ 23 , 24 ].…”

Section: Introductionmentioning

confidence: 99%

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Lin

Weng

2023

Discover Nano

View full text Add to dashboard Cite

This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given a sufficient negative bias, the overlap of the energy bands at the drain in the OFF-state is effectively suppressed, thus reducing the tunneling probability and significantly decreasing leakage current. Additionally, the large overlap area between the source and gate improves the gate’s ability to control the tunneling interface effectively, improving the ON-state current and subthreshold swing characteristics. By using the Schottky contact characteristics of a metal–semiconductor contact with different work functions to form a PN junction, the need to control doping profiles or random doping fluctuations is avoided. Furthermore, as ion implantation is not required, issues related to subsequent annealing are also eliminated, greatly reducing thermal budget. Due to the different material bandgap characteristics selected for the source and drain regions, the probability of overlap of the energy bands in the source region in the ON-state is increased and that in the drain region in the OFF-state is reduced. Based on the feasibility of the actual fabrication process and through rigorous 2D simulation studies, improvements in subthreshold swing and high on/off current ratio can be achieved simultaneously based on the proposed device structure. Additionally, the presence of the control gate structure effectively suppresses leakage current, further enhancing its potential for low-power-consumption applications.

show abstract

Characteristics of InAs/GaSb Line-Tunneling FETs With Buried Drain Technique

Cited by 12 publications

References 23 publications

MoS₂/Si tunnel diodes based on comprehensive transfer technique

MoS₂/Si tunnel diodes based on comprehensive transfer technique

A Ternary Inverter Based on Hybrid Conduction Mechanism of Band-to-Band Tunneling and Drift-Diffusion Process

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Contact Info

Product

Resources

About

Characteristics of InAs/GaSb Line-Tunneling FETs With Buried Drain Technique

Cited by 12 publications

References 23 publications

MoS2/Si tunnel diodes based on comprehensive transfer technique

MoS2/Si tunnel diodes based on comprehensive transfer technique

A Ternary Inverter Based on Hybrid Conduction Mechanism of Band-to-Band Tunneling and Drift-Diffusion Process

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Contact Info

Product

Resources

About

MoS₂/Si tunnel diodes based on comprehensive transfer technique

MoS₂/Si tunnel diodes based on comprehensive transfer technique