Characteristics of indium zinc oxide/silver/indium zinc oxide multilayer thin films prepared by magnetron sputtering as flexible transparent film heaters

Zhao, Pengxiang; Kim, Seohan; Yoon, Seong-Hwan; Song, Pung Keun

doi:10.1016/j.tsf.2018.09.018

Cited by 16 publications

(12 citation statements)

References 28 publications

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“…Transparent conductors have a good application prospect in the field of optoelectronic devices and flexible electronic devices, such as light-emitting diodes (LEDs), solar cells, flexible displays, and sensors. − Transparent conductive oxides (TCO) like indium tin oxide (ITO) and indium-free transparent conductors including carbon nanotubes, metallic nanowires, polymers, and graphene have been widely reported. − The scarcity of indium and the ion bombardment or high-temperature process during ITO deposition could lead to its high cost and also degenerate device performance. , The application of carbon nanotubes and polymers is limited by their poor electrical properties, metallic nanowires suffer from rough surfaces, and the production of graphene in large sizes is an unresolved problem. Combined with the optical properties of oxides and the electrical properties of metals, an oxide/metal/oxide (OMO) multilayer structure is a promising candidate. − The low resistance of OMO is mainly determined by the middle metallic film owing to the parallel conduction path of electricity. The oxide films are deposited as undercoat and overcoat layers to further suppress the reflection of the metal film, which effectively enhances the optical transmittance of the OMO.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Oxide/Metal/Oxide Multilayer Films as Highly Transparent Conductive Electrodes for Optoelectronic Devices

Zhang

Liu

et al. 2021

ACS Appl. Energy Mater.

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Transparent conductors are essential for optoelectronic devices and flexible electronic devices. Oxide/metal/oxide (OMO) multilayer films with outstanding photoelectric performance have become a promising alternative for traditional transparent conductive oxides (TCOs). Most of the oxide films in OMO are deposited by magnetron sputtering or thermal evaporation processes, while the strong ion bombardment or high temperatures would deteriorate the device performance. For example, to fabricate a semitransparent solar cell, a top OMO will need to be deposited on the top of the semiconductor layer. Great care needs to be taken to reduce the damage to the semiconductor material to reduce the possible trapping of photogenerated charges. Recently, Mg and Ga codoped ZnO (MGZO) has been developed because of its wider spectral transmittance and less damage to the underlying functional layers in optoelectronics. However, the conductivity of MGZO remains limited. To produce low sheet resistance, the layer thickness needs to be several hundred nanometers. Here, we present high-quality MGZO films that are deposited by the reactive plasma deposition (RPD) technique with a soft growth process at room temperature (without intentional heating), providing broadband transmission and ultrathin pure Ag films prepared by magnetron sputtering at room temperature. Compared with the single MGZO, MGZO/Ag/MGZO multilayers effectively improve thin-film conductivity while maintaining high transmittances. The transfer matrix method (TMM) is used to determine the optimum thickness of each layer in OMO, and there is an excellent agreement between the simulation and experimental results. An MGZO/Ag/MGZO (40/9.5/45 nm) transparent electrode on a glass substrate presents an average transmittance of 87% (including glass) over a spectral range of 400−800 nm (relative transmittance, 94.7%), and sheet resistance (10 Ω sq −1 ). A semitransparent perovskite solar cell with an OMO top electrode exhibits a photoelectric conversion efficiency of about 11%. This work provides an insight to grow high-quality OMO films combining the RPD-TCO technique of high-rate deposition and low ion bombardment with ultrathin Ag films at room temperature, which pushes OMO forward to practical applications in more diverse optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Low-Temperature Oxide/Metal/Oxide Multilayer Films as Highly Transparent Conductive Electrodes for Optoelectronic Devices

Zhang

Liu

et al. 2021

ACS Appl. Energy Mater.

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“…NIR-shielding coatings are designed to selectively reflect or absorb light in the NIR range and highly transmit in visible light range. For instance, thin metal coatings (such as Ag and Au thin film) have been applied on glass sheets for shielding the IR wavelengths, because they have high free electron densities, and hence have a the plasmon resonance absorption in the NIR region of ~1000 nm [ 17 ]. Although Ag coatings have excellent NIR-shielding properties, they are chemically unstable and less durable in high-humidity environments.…”

Section: Introductionmentioning

confidence: 99%

“…Although Ag coatings have excellent NIR-shielding properties, they are chemically unstable and less durable in high-humidity environments. To improve the stability of Ag layers in high-humidity environments, metal oxide/metal/metal oxide (such as MO x /Ag/MO x ) multilayer coatings have been extensively explored as transparent energy-saving coatings [ 17 , 18 ]. However, Ag oxidation is a critical issue during the direct deposition of the oxide protection layer in an O 2 reactive atmosphere on the Ag layer [ 19 ].…”

Section: Introductionmentioning

confidence: 99%

Preparation of High-Performance Metal-Free UV/Near Infrared-Shielding Films for Human Skin Protection

Liang¹,

Chen

2021

Nanomaterials

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A series of metal-free UV/near infrared (NIR)-shielding coatings are successfully fabricated by shielded cathodic arc plasma evaporation (CAPE) and substrate-biased RF magnetron sputtering processes. The UV/NIR-shielding coatings comprising quarter-wave stacks of TiO2/SiO2 multilayers and high-conductivity sputter-deposited ITO films with a thickness in the range of 200–600 nm could block IRA and IRB radiations, respectively. The total thicknesses of UV/near infrared-shielding films are in the range from 375 nm to 1513.8 nm. The anatase-phase TiO2 films with absorption edge located at ∼375 nm were deposited by shielded CAPE at ∼100 °C. Further, the well-crystallized ITO films were found to have high free-electron concentrations (1.12 × 1021 cm−3), resulting in strong absorption of IRB due to the plasmon resonance absorption. The optimal optical design and ITO film thickness were investigated, and the TiO2(SiO2/TiO2)3 multilayer combined with an ITO film thickness of 400 nm was found to provide a high NIR-shielding rate of 94.8%, UVB to UVA-shielding rate of 92.7%, and average visible light transmittance of 68.1%. Further, human skin cells protected by a UV/NIR-shielding coating showed significantly decreased reactive oxygen species generation and inflammatory cytokine expression as compared to those of unprotected cells. The results demonstrate that the development of multifunction coatings have potential for transparent heat insulation windows and human skin protection against UV/IR radiations.

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“…Therefore, our study proposed oxide/metal/oxide (OMO) structures from previous work. [28][29][30] An OMO structure has high electrical, optical, and mechanical properties compared with crystalline TCOs; 31 the high electrical properties are due to the metal layer, and the high mechanical properties owe to the ductility of metal. 32 The high optical transmittance comes from the index-matched refractive ratio between the oxide and the metal layers.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen-driven dramatically improved mechanical properties of amorphized ITO–Ag–ITO thin films

et al. 2021

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Characteristics of indium zinc oxide/silver/indium zinc oxide multilayer thin films prepared by magnetron sputtering as flexible transparent film heaters

Cited by 16 publications

References 28 publications

Low-Temperature Oxide/Metal/Oxide Multilayer Films as Highly Transparent Conductive Electrodes for Optoelectronic Devices

Low-Temperature Oxide/Metal/Oxide Multilayer Films as Highly Transparent Conductive Electrodes for Optoelectronic Devices

Preparation of High-Performance Metal-Free UV/Near Infrared-Shielding Films for Human Skin Protection

Hydrogen-driven dramatically improved mechanical properties of amorphized ITO–Ag–ITO thin films

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