Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime

Yeh, Jeng-Ya; Mawst, Luke J.; Tansu, Nelson

doi:10.1016/j.jcrysgro.2004.09.005

Cited by 9 publications

(6 citation statements)

References 25 publications

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“…Figure 3(b) shows corresponding PR spectra of these samples. Moderate thermal treatments often improve the crystal quality and optoelectronic properties of dilute nitride alloys, [28][29][30][31][32] and this can account for the increase in the PR signal intensities for E − -related transition at about 1.2 eV after the annealing at 800 °C. The slight increase in the transition energy of the E − -related transition after 900 °C may originate from changes in the SL potential owing to the broadening of the N distribution profile.…”

Section: Resultsmentioning

confidence: 99%

Control of intermediate-band configuration in GaAs:N δ-doped superlattice

Osada

Suzuki

Yagi

et al. 2015

Jpn. J. Appl. Phys.

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GaAs:N δ-doped superlattices (SLs) consisting of alternating layers of undoped and N δ-doped GaAs were fabricated by molecular beam epitaxy (MBE) as possible candidates for the light-absorbing material of intermediate-band solar cells (IBSCs). Since the energy gaps in IBSCs need to be adjusted to optimum values to achieve sufficiently high conversion efficiency, it is important to control precisely the band configuration of intermediate-band (IB) materials. In this study, we demonstrated the control of the IB energy configuration in GaAs:N δ-doped SLs by changing their structural parameters. Optical transitions due to the SL minibands related to the N-induced conduction subbands E + and E % were clearly observed and the transition energies depended systematically on the N area density and period length of the SLs. Conversion efficiency calculations based on the detailed balance model indicated that IBSCs with an efficiency of nearly 60% are achievable by using the fabricated GaAs:N δ-doped SLs.

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Section: Resultsmentioning

confidence: 99%

Control of intermediate-band configuration in GaAs:N δ-doped superlattice

Osada

Suzuki

Yagi

et al. 2015

Jpn. J. Appl. Phys.

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“…However, laser emission in MOCVD-grown samples at 41.4 mm remains challenging in this alloy system because of the diminished N incorporation in alloys with high In concentrations [4]. Furthermore, increased N incorporation, when successful, generally is accompanied by degradations of device performance [5,6], possibly due to the formation of In-N clusters, fluctuations in the well width, and/or local strains induced by the presence of N [7].…”

Section: Introductionmentioning

confidence: 99%

Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP

Song

Babcock

Paulson

et al. 2008

Journal of Crystal Growth

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“…For 1300-nm emission wavelengths, diode lasers with active regions of highly strained InGaAsN quantum wells (QWs) [1], GaAsSb QWs [2,3], InAs quantum dots [4] and InGaAs-GaAsSb type-II QWs [5] have been demonstrated. However, in the 1550-nm regime, these methods encounter great difficulties in terms of wavelength limitation and device performance degradation [6,7]. To overcome this problem, a dilute-nitride type-II InGaAs-GaAsSb QW structure was proposed [8,9] for achieving 1550-nm on GaAs, as shown in the schematic band diagram in Fig.…”

Section: Introductionmentioning

confidence: 99%