2012 16th IEEE Mediterranean Electrotechnical Conference 2012
DOI: 10.1109/melcon.2012.6196508
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Characteristics of interface states in irradiated Pd/n-SiGe as derived from frequency- and temperature-dependent admittance

Abstract: We have used, in this contribution, the measured frequency-dependent ac admittance of irradiated Pd/n-GaN Schottky contacts at different temperatures ranging from 100K to 300K to derive the admittance associated with the displacement current in the Pd/GaN interfacial layer. The normalized conductance versus frequency plots at various temperatures, are characterized essentially by the presence of peaks, which is seen as a signature and a direct evidence for the presence of interface traps. The magnitudes and fr… Show more

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