Characteristics of low-k RF MEMS capacitive switches on gallium arsenide substrate

Sharma, Prashant; Koul, Shiban K.; Murlidharan, R.; Mangatayaru, A.; Suryanarayanan, P.; Chaturvedi, Saurabh; Naik, Akshay

doi:10.1109/amta.2008.4763216

2008 International Conference on Recent Advances in Microwave Theory and Applications 2008

DOI: 10.1109/amta.2008.4763216

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Characteristics of low-k RF MEMS capacitive switches on gallium arsenide substrate

Prashant Sharma¹,

Shiban K. Koul²,

R. Murlidharan³

et al.

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2013

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Cited by 2 publications

References 7 publications

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Design and Analysis of a Novel Capacitive RF MEMS Switch with Folded Beam

Deng

Fan

Chen

et al. 2013

AMR

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In this paper, the design, optimization and equivalent circuit model for a K-band capacitive RF MEMS switch are presented. The fixed-ﬁxed switch is designed with folded structures on the high-resistance silicon substrate, by using gold as the beam and silicon nitride as the dielectric layer. The resulting switch working on 25.2GHz exhibits the performance with insertion loss less than 0.20dB, isolation more than 40dB and the drive voltage less than 16V by simulation.

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Design and Analysis of a Novel Capacitive RF MEMS Switch with Folded Beam

Deng

Fan

Chen

et al. 2013

AMR

View full text Add to dashboard Cite

show abstract

Design and electrical characterization of wafer-level micro-package for GaAs-based RFMEMS switches

Chaturvedi¹,

Saravanan²,

Bhat³

et al. 2013

IETE J Res

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Characteristics of low-k RF MEMS capacitive switches on gallium arsenide substrate

Cited by 2 publications

References 7 publications

Design and Analysis of a Novel Capacitive RF MEMS Switch with Folded Beam

Design and Analysis of a Novel Capacitive RF MEMS Switch with Folded Beam

Design and electrical characterization of wafer-level micro-package for GaAs-based RFMEMS switches

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