Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

Bozgeyik, Mehmet S.; Cross, Jeffrey S.; Ishiwara, Hiroshi; Shinozaki, Kazuo

doi:10.1016/j.mee.2010.01.021

Cited by 15 publications

(5 citation statements)

References 19 publications

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“…This kind of shift is widely reported for different kind of ferroelectric materials (Bozgeyik et al 2010;Juan et al 2007). Furthermore, the sharp change in the capacitance at the accumulation and inversion region indicates that the interfaces of the junction are good.…”

Section: Methodssupporting

confidence: 64%

“…This in turn strengthens the repulsive force between neighboring domain walls. As a result, the mobility for the domain wall reduces, which in turn makes the domain reorientation more difficult (Bozgeyik et al 2010). Leading up to higher activation energy is required for the reorientation of the domains; as a result, the remnant polarization decreases, which reflects as a narrower memory window in C-V curves.…”

Section: Methodsmentioning

confidence: 99%

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Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure

2011

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The effect of the chemical composition of the ferroelectric barium strontium titanate (BST) on the memory window behavior of Al/BST/SiO 2 /Si-gate-field effect transistor structure has been investigated. Nanocrystalline Ba x Sr 1-x TiO 3 thin films with different x values have been fabricated as metal-ferroelectric-insulator-semiconductor (MFIS) and metal-ferroelectric-metal (MFM) configurations using a sol-gel technique. The variation of the dielectric constant (e) and tan d with frequency for MFM samples have been studied to ensure the dielectric quality of the material. At low frequencies, e increases as the strontium content decreases, whereas at high frequencies, it shows the opposite variation, which is attributed to the dipole dynamics. The ferroelectricity of the BST within MFM structure has been investigated using C-V characteristics, which show that the ferroelectric hysteresis strength increases as the strontium content decreases. The ferroelectric memory behavior of the MFIS samples has been investigated using C-V characteristics. The results show that the memory window width increases as the strontium content decreases; this is attributed to the grain size and dipole dynamics effect.

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Section: Methodssupporting

confidence: 64%

Section: Methodsmentioning

confidence: 99%

Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure

2011

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“…[1][2][3][4][5][6][7][8][9][10] Moreover, due to its unique properties mentioned above, BTO is used as a ferroelectric thin film in memory applications such as ferroelectric random access memory (FeRAM) where a metalferroelectric-metal (MFM) capacitor is used, [8] and ferroelectric field effect transistors (FeFETs) where ferroelectric material is used as the gate oxide in the form of metalferroelectric-semiconductor (MFS) or metal-ferroelectricinsulator-semiconductor (MFIS) structures. [11][12][13][14] In an MFS structure, the surface potential of the semiconductor is controlled by the remnant polarization of the ferroelectric thin film, [15] therefore ferroelectric materials are chosen in memory applications such as FeRAMs, FeFETs, etc.…”

Section: Introductionmentioning

confidence: 99%

Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi₄Ti₃O₁₂/p—Si structures by using the admittance spectroscopy method

Yıldırım¹,

Durmuş²,

Altındal³

2013

Chinese Phys. B

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In this study, Al/p-Si and Al/Bi 4 Ti 3 O 12 /p-Si structures are fabricated and their interface states (N ss ), the values of series resistance (R s ), and AC electrical conductivity (σ ac ) are obtained each as a function of temperature using admittance spectroscopy method which includes capacitance-voltage (C-V ) and conductance-voltage (G-V ) measurements. In addition, the effect of interfacial Bi 4 Ti 3 O 12 (BTO) layer on the performance of the structure is investigated. The voltagedependent profiles of N ss and R s are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that N ss and R s , as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of N ss and the reordering and restructuring of N ss under the effect of temperature. The values of activation energy (E a ), obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the E a of the metal-ferroelectric-semiconductor (MFS) structure is found to be half that of the metal-semiconductor (MS) structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms (N A ), built-in potential (V bi ), Fermi energy (E F ), image force barrier lowering (∆Φ b ), and barrier height (Φ b ), are extracted using reverse bias C −2 -V characteristics as a function of temperature.

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“…Besides low permittivity, the gate ferroelectric film requires a relatively low remanent polarization (P r ) of around 1 µC cm −2 to match the requisite charge for channel conductivity controlling in the memory process [8]. Hence, the key parameters of ferroelectric thin films for 1T-type FeRAMs are quite small dielectric constant (ε r ) and remanent polarization (P r ) around 1 µC cm −2 as discussed by the related researchers [9][10][11]. These qualities have become the motivation for research devoted to SBT as the most suitable candidate gate ferroelectric for FeFET-type FeRAMs.…”

Section: Introductionmentioning

confidence: 99%

Investigating structural features of Ba and Zr co-substituted strontium bismuth tantalate thin films

Bozgeyik

2019

Bull Mater Sci

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Structural (crystal and microstructure), chemical and electronic states, and ferroelectric and electrical features of Ba and Zr co-substituted strontium bismuth tantalate (SBT) were probed in this study. Distinctly, Ba and Zr were substituted for Ta and Sr sites of Sr 0.8 Bi 2.2 Ta 2 O 9 in the form of Sr 0.8−x Ba x Bi 2.2 Ta 2−y Zr y O 9. To investigate the impact of the co-substitution on the crystal structure, microstructure, ferroelectric and electrical properties, Sr 0.8−x Ba x Bi 2.2 Ta 2−y Zr y O 9 thin films were deposited on Pt/Ti/SiO 2 /Si(100) wafers by sol-gel spin by coating method. Crystal structure, microstructure, chemical and electronic states, ferroelectric, capacitance and leakage current characteristics of the films were studied to investigate potential for one transistor type ferroelectric random access memories (1T-type FeRAMs). Successful substitutions up to 10 mol% lead to reduction of double remanent polarization (2P r) to 10.26 µC cm −2 , and dielectric constant (ε r) to 135. These values demonstrate that successful co-substitution of limited Ba and Zr in SBT with stable crystal structure has the ability to decrease P r and ε r values of the ferroelectric material which can be a candidate gate to be utilized in ferroelectric field-effect transistors (FeFETs) for 1T-type FeRAM applications.

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Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

Cited by 15 publications

References 19 publications

Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure

Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure

Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi₄Ti₃O₁₂/p—Si structures by using the admittance spectroscopy method

Investigating structural features of Ba and Zr co-substituted strontium bismuth tantalate thin films

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Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

Cited by 15 publications

References 19 publications

Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure

Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure

Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi4Ti3O12/p—Si structures by using the admittance spectroscopy method

Investigating structural features of Ba and Zr co-substituted strontium bismuth tantalate thin films

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Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi₄Ti₃O₁₂/p—Si structures by using the admittance spectroscopy method