Characteristics of metal–oxide–semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation

Abstract

Articles you may be interested inFunctional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation Appl. Phys. Lett. 98, 053501 (2011); 10.1063/1.3549178 Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxidesemiconductor field-effect transistor Appl. Phys. Lett. 92, 063506 (2008); 10.1063/1.2839402Scaling considerations for high performance 25 nm metal-oxide-semiconductor field effect transistors Hot-carrier effects on radio frequency noise characteristics of LDD n-type metal-oxide-semiconductor field effect transistors J.Low-voltage operation from the tower structure metal-oxide-semiconductor field-effect transistor Si field emitter A functional gate metal-oxide-semiconductor field-effect transistor that enables self-adjustment of threshold voltage (V th ) was developed for the ultralow power operation. The operating principle enables the on-current to be increased without increasing the off-current. Prototype devices were fabricated with complementary metal-oxide-semiconductor (CMOS) fabrication technology using a silicon-on-insulator substrate, and the fundamental device characteristics necessary for ultralow power operation were demonstrated with an emphasis on the device reliability. A negative V th shift was caused by electron ejection from the poly-Si charge trap layer, and a positive V th shift was caused by electron injection from the top gate electrode. A fabricated device endured 10 5 electron ejection-and-injection cycles when only a positive bias V g was applied. Endurance characteristics of the fabricated devices showed that the number of cycles to oxide breakdown increased as the channel size decreased. The authors explained the SiO 2 breakdown mechanism by using a percolation model. They consider that scaling down of the channel size and the thickness of the tunnel gate oxide will open the way to the development of CMOS logic applications for this device.

Biosensing based on field-effect transistors (FET): Recent progress and challenges

“…MOSFETs can easily become damaged due to the accumulation of large amounts of static charge resulting from high input resistance. Thus, they need to be used carefully [ 40 ]. For example, a commercial biosensing device based on MOSFET for the recognition of C-reactive protein (CRP) was created by Lyu and colleagues.…”