Characteristics of MSM photodetectors with trench electrodes on p-type Si wafer

Laih, Li-Hong; Chang, Tien-Chang; Chen, Yen-Ann; Tsay, Wen-Chin; Hong, Jyh-Wong

doi:10.1109/16.711369

Cited by 38 publications

(2 citation statements)

References 15 publications

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“…[47] Even the crystal photodetector of 1 also shows high responsivity at high irradiation (Figure S7, see Supporting Information), such as at 1 mW cm −2 (R ∼ 3.01 A W −1 ), 10 mW cm −2 (R ∼ 1.05 A W −1 ), which is higher than that of commercial Si PDs (<0.2 A W −1 ). [48,49] Photo-detectivity (D*) is another crucial index to evaluate the ability of photodetector to perceive weak light signals, which can be estimated by D* = I ph /[P 0 S(2qI dark ) 1/2 ], where q is the elementary electronic charge. With the incident light power density decreasing, the D* values of 1 also show a gradual increasing variation and the maximum value reaches to be ≈1.2 × 10 13 Jones, which is much higher than other known 2D hybrid perovskites detectors, such as (4-AMP)Cs 2 Pb 3 Br 10 (D* ∼ 6.5 × 10 10 Jones) [17] and (IA) 2 (DMA)Pb 2 Br 7 (D* ∼ 2.8 × 10 11 Jones).…”

Section: Resultsmentioning

confidence: 99%

Acquiring a Newly Tailored 2D Dion–Jacobson Hybrid Perovskite with Large Structural Distortion for Efficient Crystal Array Photodetector

Fan

et al. 2022

Advanced Optical Materials

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Dion–Jacobson (DJ) phase of 2D hybrid perovskites has recently attracted intensive attention owing to their remarkable optoelectronic properties and superior structural stability. In spite of great endeavors, only a few DJ‐type multilayered hybrid perovskites are obtained and most of them are constructed by very small organic spacer cations (e.g., Cs+ and CH3NH3+). It is still challenging to incorporate larger spacing moieties inside the perovskite cages for accomplishing excellent photoelectric properties. Herein, a newly tailored member of DJ‐type 2D perovskites, (HIS)(DMA)Pb2Br7 (1, where HIS2+ is histammonium and DMA+ is dimethylammonium), of which the perovskite cavities display a remarkable structural distortion to accommodate relatively larger secondary DMA+ cation as the “perovskitizer” is acquired. The monolayers of divalent HIS2+ organic cations directly link to inorganic sheets through NH∙∙∙Br hydrogen bonds, thus eliminating the van der Waals gap in 2D Ruddlesden–Popper counterparts and enabling superior phase stability. As a result, crystal‐based array photodetector of 1 shows fascinating photoactive activities of high detectivity (1.2 × 1013 Jones), large responsivity (18.1 A W−1), and antifatigue behavior, along with polarization‐sensitive detection based on the intrinsic anisotropy. Such findings disclose the potential of 1 for efficient photodetection, and definitely enrich the booming family of 2D hybrid perovskites.

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Section: Resultsmentioning

confidence: 99%

Acquiring a Newly Tailored 2D Dion–Jacobson Hybrid Perovskite with Large Structural Distortion for Efficient Crystal Array Photodetector

Fan

et al. 2022

Advanced Optical Materials

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“…Very recently, Ge-on-SOI MSM photodetector has been experimentally demonstrated to exhibit high dark current performance in the order of 150 µA for a given applied bias of 1.0 V, despite achieving impressive speed performance [4]. In order to circumvent this issue, various approaches have been explored for effective dark current suppression which include the adoption of SiO 2 passivation [5], amorphous-Si [6,7] or amorphous-Ge [8] thin films between the Schottky contact and the semiconductor interface for modulating the Schottky barrier height.…”

Section: Introductionmentioning

confidence: 99%

Novel Metal-Germinade Schottky Barrier Contacts for Si-Photonics Application

Lo¹,

Ang²,

Yu³

et al. 2008

ECS Trans.

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To reap the full benefits of superior transport and optical properties of germanium, a low-resistance metal-germanides contact that is compatible with existing Si CMOS process technology would be highly desirable. In this abstract, we report the developments of nickel-germanide (NiGe) contact technology and its combination with Schottky barrier engineering techniques (e. g., dopants and valence-mending absorbate segregations) for contact resistance improvement. In addition, we explore the application of these techniques in NiGe Schottky barrier metal-Ge-metal (MSM) photodetector for low dark current and high speed photodetection applications, such as through Si:C (Metal direct contact on Ge) or Sincorporation (for NiGe). Sulfur is used as example in the valencenmending absorbate scheme in this work. In both cases, significant suppression of dark current (~103 to 104 ×) was observed, with the enhanced hole Schottky barrier heights to 0.49eV (S-incorporated) or 0.52eV (thin Si:C layer). In both surface-illuminated and waveguided schemes, 12-15GHz speed were obtained with 1V operating bias.

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Ultralow Optical and Electrical Losses via Metal‐Assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes

Kim

Bong

et al. 2020

Advanced Optical Materials

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Various types of anti‐reflective technologies are capable of increasing the light absorption of optical devices. The electrical conductivity of the collected carriers must also be increased for efficient photoelectric conversion. However, increasing the front electrode area reduces the amount of light absorption, causing shading and resistive losses to conflict in front‐illuminated devices. In this study, a low‐reflectance surface and high‐conductance electrode for Schottky photodiodes are fabricated using metal‐assisted chemical etching (MacEtch). Si nanograss (SiNG) and Ag‐mesh formed via MacEtch serve as a subwavelength surface and buried electrodes, respectively. SiNG increases light absorption without causing shading loss, while the buried Ag‐mesh considerably improves electrical conductivity. The SiNG/Ag‐mesh structure exhibits a solar weighted reflectance of 1.20% and a sheet resistance of 5.48 Ω □−1. The SiNG/Ag‐mesh Schottky photodiode exhibits an external quantum efficiency of 89.5% at a wavelength of 860 nm and an internal photoemission effect in the sub‐band gap. The self‐organized SiNG/Ag‐mesh, fabricated through a simple wet‐etching method, simultaneously addresses the issues of optical and electrical losses, enabling the application of this technique to a wide range of optoelectronic devices.

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Characteristics of MSM photodetectors with trench electrodes on p-type Si wafer

Cited by 38 publications

References 15 publications

Acquiring a Newly Tailored 2D Dion–Jacobson Hybrid Perovskite with Large Structural Distortion for Efficient Crystal Array Photodetector

Acquiring a Newly Tailored 2D Dion–Jacobson Hybrid Perovskite with Large Structural Distortion for Efficient Crystal Array Photodetector

Novel Metal-Germinade Schottky Barrier Contacts for Si-Photonics Application

Ultralow Optical and Electrical Losses via Metal‐Assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes

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