Characteristics of Nano-Floating-Gate Memory with Au Nanoparticles in SiO₂ Dielectrics

Abstract

The analysis of modulation-broadened experimental magnetic resonance spectra by the fitting of theoretical lineshape functions is described together with tests on zero field NMR lineshapes from 69Co in cubic cobalt. It is shown that for small modulation amplitudes values for the resonance width, intensity and mode admixture may be obtained. For large modulation amplitudes considerable errors may occur in the deduced values of intensity and width but their ratio, the resonance amplitude, is still accurately determinable. The application of correction curves to spectral parameters of resolved lines is summarized.

Acceleration of metal-atom diffusion in electric field at metal/insulator interfaces: First-principles study

“…One such example is metal nanodot memory. When dots in a SiO 2 layer are charged and electric fields are produced around the dots, metal-atom diffusion occurs from the dots to the surrounding SiO 2 layer and substrate, [5][6][7][8][9] which often deteriorates the charging ability of memory devices. On the other hand, such a diffusion property in electric fields is used to produce metal nanowires in insulators, which connect two electrodes and thus are promising for resistive memory applications.…”

Speed Enhancement of WSi2 Nanocrystal Memory with Barrier-Engineered Si3N4/HfAlO Tunnel Layer

“…In particular, the metal silicide nanocrystals have been reported to exhibit a higher density of states, a larger work function, and a stronger coupling than other nanocrystals. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] In addition, they have good thermal stability and compatibility for a Si-based fabrication process. However, the improvement in tunneling efficiency between a tunnel layer and a quantum well should be required for the enhancements of program and erase speeds.…”

Electrical property of nonvolatile memory with SiC nano-particles formed in SiO2

“…Due to the confined nano-particles, NFGM has better characteristics, such as operation voltage, write/erase speed, endurance, and charge-retention. Hence, many studies about various kinds of nano-particles (Si, NiSiN, Au, In 2 O 3 , TiSi 2 /Si) have been reported [3][4][5][6][7][8].…”