Characteristics of (Pb,Sr)TiO3 thin films with various Sr content

Preparation and dielectric properties of compositionally graded lead barium zirconate thin films

“…4. T is defined as [ε r(T,0) − ε r(T,E) ]/ε r(T,0) , where ε r(T,0) and ε r(T,E) are defined as before [19]. As expected, the tunability for both graded films is increased with electric-field increasing.…”

Tunable crystalline structure and electrical properties of (Pb,Sr)TiO3 films grown by liquid phase epitaxy

“…5–7 When substituting Sr onto the Pb-site, Pb 1− x Sr x TiO 3 (PST), the tetragonality of the structure is reduced and the cubic structure is reached at room temperature for x = 0.5. 8–10 Controlling the Sr-content and thereby the structure allows the electrical properties to be tuned. 9,11 This includes reducing the T Curie but also stabilizing a -domains having interesting nanoscale switching phenomena when grown as thin films.…”

“…8–10 Controlling the Sr-content and thereby the structure allows the electrical properties to be tuned. 9,11 This includes reducing the T Curie but also stabilizing a -domains having interesting nanoscale switching phenomena when grown as thin films. 12…”

Large magnetodielectric response of PST/LSMO/LCMO film over a wide temperature range

“…Assembling LSMO and LCMO together is expected to obtain large MR and low r over a wider temperature range near room temperature. Pb 0.6 Sr 0.4 TiO 3 (PST) was chosen as dielectric layer for its excellent dielectric properties, whose lattice structure is simple and has only one phase transition, that is the ferroelectric-paraelectric phase transition, and the T c is far above 400 K. [27][28][29] Compared with pulsed laser deposition and sputtering, CSD has the advantages of excellent chemical homogeneity, easy control of stoichiometry, and suitable for large area. [30][31][32] Si wafer was chosen as substrate because the Si wafer is one of the main micro-electronic materials, which is essential for future commercial applications.…”