Characteristics of pulse plated ZnTe films

Murali, K. R.; Rajkumar, P.

doi:10.1007/s10854-006-7476-1

Cited by 8 publications

(6 citation statements)

References 11 publications

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“…Electrodeposition and sputtering are two major techniques to produce soft magnetic thin films. However, electroplating is often preferred to sputtering due to some electrodeposition advantages such as simplicity and cost-effectiveness [22][23][24][25]. The traditional baths, used for deposition soft magnetic thin films, are additive free and have low pH (*2.8) [2,3,7].…”

Section: Introductionmentioning

confidence: 99%

Studies of electrical resistivity and magnetic properties of nanocrystalline CoFeCu thin films electrodeposited from citrate-added baths

Mehrizi

Sohi

Shafahian

et al. 2011

J Mater Sci: Mater Electron

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In this study, nanocrystalline CoFeCu thin films were electrodeposited at different current densities from baths with natural pH (around 5.2) and containing 20 g/L citrate sodium. The relationship of films structure with soft magnetic properties and electrical resistivity, which are required for new generation magnetic head core, were investigated. SEM, EDS, XRD, TEM, VSM and four probe-point methods were used for characterization of the deposited films. The deposited films exhibited very uniform and homogenous structure with co-axis grains (confirmed by (111) and (110) poles figures and TEM images) throughout the coating. Overall, it was noticed that increasing current density from 1 to 24 mA/cm 2 reduced both grain size (from 63 to 8 nm) and coercivity (from 20 to 1 Oe) of the films. In addition, plotting Log (Hc) versus Log (D 6 ) demonstrated that the coercivity of the films followed ''D 6 law''. Moreover, increasing current density changed phase structures of the films from FCC (Cu)?FCC (Co) to FCC (Co) and then to FCC (Co)

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Section: Introductionmentioning

confidence: 99%

Studies of electrical resistivity and magnetic properties of nanocrystalline CoFeCu thin films electrodeposited from citrate-added baths

Mehrizi

Sohi

Shafahian

et al. 2011

J Mater Sci: Mater Electron

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“…XPS detection performed on the ZnTe:N also confirms the existence of N in the NRs (Figure 3d). A weak peak at 398 eV corresponding to the N 1s core level was observed in addition to the strong Zn and Te signals 40,41 indicating that N is indeed incorporated into ZnTe:N NRs. Semiquantitative XPS analysis reveals that N concentration was close to 1%.…”

Section: Resultsmentioning

confidence: 99%

Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

Jiang

et al. 2010

J. Phys. Chem. C

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Single-crystalline intrinsic and N-doped p-type ZnTe nanoribbons (NRs) were synthesized via the thermal evaporation method in argon-mixed hydrogen and nitrogen-mixed ammonia, respectively. Both intrinsic and doped ZnTe nanoribbons had zinc blende structure and uniform geometry. X-ray diffraction peaks of N-doped ZnTe nanoribbons had an obvious shift toward higher angle direction as compared with intrinsic ZnTe. X-ray photoelectron spectroscopy detection confirmed that the dopant content of nitrogen in ZnTe nanoribbons was close to 1%. Field-effect transistors based on both intrinsic and N-doped ZnTe nanoribbons were constructed. Electrical measurements demonstrated that N-doping led to a substantial enhancement in p-type conductivity of ZnTe nanoribbons with a high hole mobility of 1.2 cm−2 V−1 S−1 and a low resistivity of 0.14 Ω cm in contrast to the 6.2 × 10−3 cm−2 V−1 S−1 and 45.1 Ω cm for intrinsic nanoribbons. Moreover, the defect reaction mechanism was proposed to explain the p-type behaviors of both the intrinsic and the N-doped ZnTe nanoribbons.The ZnTe nanoribbons with enhanced p-type conductivity may have important potential applications in nanoelectronic and optoelectronic devices.

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“…ZnTe is important for the development of various semiconductor devices, including blue LEDs, laser diodes, solar cells, and components of microwave generators. ZnTe is also one of the most important and leading thin film materials for * E-mail: nazar_abbas@comsats.edu.pk the fabrication of solar cells [5][6][7][8][9][10][11][12][13][14][15][16]. It can be used for solar cells as a back absorbing p-layer.…”

Section: Introductionmentioning

confidence: 99%

Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system

Abbas

Shah

Jehangir³

et al. 2018

Materials Science-Poland

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Zinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe powder as an evaporant. The samples were prepared at different substrate temperatures, rates of evaporation and thicknesses. The X-ray diffraction was used to study the structure of the films. The structures of the samples were found to be polycrystalline with preferred (1 1 1) orientation. Transmission spectra of all ZnTe films were recorded in the range of 300 nm to 2500 nm. The films were electrically characterized using Hall effect measurements at room temperature. It has been stated that the electrical resistivity, mobility and carrier concentration are strongly influenced by the substrate temperature. From the SEM results, it is clear that the surface of ZnTe is very smooth with occasional large particles on it.

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Characteristics of pulse plated ZnTe films

Cited by 8 publications

References 11 publications

Studies of electrical resistivity and magnetic properties of nanocrystalline CoFeCu thin films electrodeposited from citrate-added baths

Studies of electrical resistivity and magnetic properties of nanocrystalline CoFeCu thin films electrodeposited from citrate-added baths

Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system

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