Characteristics of reactive ion etching for zinc telluride using CH4 and H2 gases

Abstract

Articles you may be interested inFabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH 4 / H 2 / Ar plasma on the ZnO/GaN heterojunction light emitting diodes J. Vac. Sci. Technol. A 28, 745 (2010); 10.1116/1.3357282 Electron-cyclotron-resonance plasma etching of the ZnO layers grown by molecular-beam epitaxyWe have studied the characteristics of reactive ion etching for zinc telluride using CH 4 and H 2 gases. The effects of CH 4 /H 2 gas composition, total gas pressure, and plasma power on the etching properties were investigated. It was found that variation of the CH 4 concentration in gas mixtures leads to changes in both the etching rate and the surface morphology. The etching rate of ZnTe increases from 128 to 629 Å/min with increasing the plasma power from 50 to 300 W at a 4% CH 4 concentration and 25 Pa pressure. A smooth etched ZnTe surface was obtained in the range of 4%-16% CH 4 concentration and 10-65 Pa pressure.

Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy

“…This material has potential applications for a variety of optoelectronic devices such as pure green light emitting diodes, solar cells, terahertz detectors, wave-guides and modulators [1][2][3][4][5][6][7][8]. The epitaxial growth of ZnTe on GaAs has received considerable interest because GaAs is a desirable substrate due to its large role in the electro-optic industry.…”

Low-pressure metalorganic vapor phase epitaxy growth of ZnTe

“…These have generated a great deal of effort toward the growth and characterization of this material [1][2][3][4][5][6][7][8][9][10][11][12][13]. Recently, we have succeeded in fabricating a ZnTe light-emitting diode (LED) using the Al diffusion technique and observed pure-green electroluminescence at a wavelength of 550 nm at room temperature [14].…”

Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxy

“…This material has potential applications for a variety of optoelectronic devices such as pure green light-emitting diodes, solar cells, terahertz detectors, wave-guides and modulators [1][2][3][4][5][6][7][8]. The epitaxial growth of ZnTe on GaAs has received considerable interest because GaAs is a desirable substrate due to its large role in the electro-optic industry.…”