Characteristics of second harmonic generation in GaAs plates

Krasnov, Victor F.; Prots, V. I.; Rubenchik, Alexander M.; Struts, S.G.; Stupak, M. F.

doi:10.1070/qe1990v020n05abeh006488

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“…To control the presence of a polycrystalline component. 4) . To determine the refractive indeX of thin films.…”

Section: Lwmentioning

confidence: 95%

<title>Nonlinear optic in-situ diagnostics of a crystalline film in molecular-beam-epitaxy devices</title>

et al. 1991

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A new method of film structure " in situ' monitoring is proposed for MBE (molecular beam epitaxy) and MOCVD technologies. It is based on the analysis of second harmonic (SH) radiation induced in a growing film irradiated by a laser beam. SH intensity measurement versus angle of polarization plane of the incident light and versus film thickness provides the " i.n situ* information about film crystal quality, presence of polycrystal component and crystallographic axes orientation. This method can be complementary to the well-known technique of fast electron diffraction (RHEED) and is supposed to be especially suitable for research groups since it allows a correlation between techological and crystallographic parameters to be quickly determined.

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“…To control the presence of a polycrystalline component. 4) . To determine the refractive indeX of thin films.…”

Section: Lwmentioning

confidence: 95%