2006
DOI: 10.1016/j.tsf.2006.07.056
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Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier

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Cited by 12 publications
(7 citation statements)
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“…A similar tendency has also been confirmed in the case of plasmaenhanced CVD (PECVD) SiO x N y films using HMDS. 18) The decrease in carbon content leads to the formation of denser films and results in a better WVTR. We also hypothesize that the presence of a suitable amount of carbon atoms in the films might be the cause of compressive stress.…”
Section: Resultsmentioning
confidence: 99%
“…A similar tendency has also been confirmed in the case of plasmaenhanced CVD (PECVD) SiO x N y films using HMDS. 18) The decrease in carbon content leads to the formation of denser films and results in a better WVTR. We also hypothesize that the presence of a suitable amount of carbon atoms in the films might be the cause of compressive stress.…”
Section: Resultsmentioning
confidence: 99%
“…As all flexible polymer substrates can permeate water vapor and oxygen, the prevention of gas permeation into flexible devices has been an important problem. Therefore, several permeation barrier layers using inorganic oxide films have been proposed, such as silicon oxide (SiOx), silicon nitride (SiNx), and aluminium oxide (AlOx), have been widely used. Inorganic oxide films are however brittle and easily fractured when they are deformed due to the large difference between the elastic properties of oxide films and the polymer substrate .…”
Section: Introductionmentioning
confidence: 99%
“…One of the common precursors used for the deposition of SiO x films is hexamethyldisiloxane (HMDSO) [14][15][16][17][18]. Furthermore, hexamethyldisilazane (HMDSN) is used in many applications for the deposition of silicon nitride, but also for SiO x films [22][23][24][25][26][27]. In comparison to silanes, both are easy to handle, but contain methyl groups, respectively [22,28].…”
Section: Introductionmentioning
confidence: 99%
“…Dissociation and reaction pathways in plasma processes of HMDSO and HMDSN [10,[45][46][47][48][49][50] as well as SiO x film growth [14][15][16][17][18][22][23][24][25][26][27] have been stated in literature. However, only little work has been published containing a systematic comparison of HMDSO and HMDSN based coatings, applied as interlayers and SiO x barrier coatings on polymers, under the same conditions, within the same setup and on equal substrates [51].…”
Section: Introductionmentioning
confidence: 99%