Characteristics of the indium-doped infrared sensing MOSFET(IRFET)

Loh, K. W.; Hawkins, Bobby; Elabd, H.; Forbes, L.

doi:10.1109/t-ed.1976.18649

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1979

2009

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Cited by 11 publications

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“…Traditional photoelectric detectors include photodiodes (Melchior 1972(Melchior , 1977, phototransistors (Jayson and Knight 1976;DeLaMoneda et al 1971;Forbes et al 1976), avalanche photodiodes (Johnson 1965;Carrano 2000), PiN diodes (Lee and Sze 1970;Singh et al 2002), and metal-semiconductor-metal photodetectors (Chen et al 2001). Although different in structures and performances, all the traditional photoelectric detectors have a common characteristic: they can generate only a constant electric signal when the illuminance is constant, implying that the circuitry followed the photoelectric detectors must deal with DC signals.…”

Section: Introductionmentioning

confidence: 99%

A novel photoelectric MOSFET with AC output under constant illumination

2009

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Traditional photoelectric devices can generate only DC electric signals under constant illumination. In this work, a novel photoelectric metal-oxide-semiconductor fieldeffect transistor (MOSFET) with AC output under constant illumination is introduced, in which the channel current is modulated by the gate voltage. This virtue can greatly simplify the signal processing circuitry. This photoelectric MOSFET has been successfully fabricated using a standard 0.8 micron MOSFET process.

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