2001
DOI: 10.1016/s0378-7753(01)00829-1
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Characteristics of tin nitride thin-film negative electrode for thin-film microbattery

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Cited by 30 publications
(30 citation statements)
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“…Numerous methods to synthesize metal thin films are known such as atmospheric pressure chemical vapor deposition (CVD) [1,2,6,9], plasmaenhanced CVD [10], magnetron sputtering [11,12], reactive sputtering [13,14], and reactive radio frequency (RF) sputtering [3,5,15,16]. Among them, reactive RF magnetron sputtering is commonly used to obtain uniform thin films.…”
Section: Introductionmentioning
confidence: 99%
“…Numerous methods to synthesize metal thin films are known such as atmospheric pressure chemical vapor deposition (CVD) [1,2,6,9], plasmaenhanced CVD [10], magnetron sputtering [11,12], reactive sputtering [13,14], and reactive radio frequency (RF) sputtering [3,5,15,16]. Among them, reactive RF magnetron sputtering is commonly used to obtain uniform thin films.…”
Section: Introductionmentioning
confidence: 99%
“…Group IV-Nitride (IV-N) semiconductors on the other hand, such as Si 3 N 4 [4] and Ge 3 N 4 [5] have been investigated mainly as dielectrics, but Sn 3 N 4 , which has been proposed as a material for energy storage [6] and solar cells [7], has not been investigated despite the fact that Sn has a low melting point of 232 1C and is cheap. To date Sn 3 N 4 films have been grown by halide chemical vapor deposition [8,9], metal organic chemical vapor deposition (MOCVD) [10], sputtering [11][12][13][14] and ammonothermal synthesis [15,16].…”
Section: Introductionmentioning
confidence: 99%
“…Xie et al [73] successfully fabricated a crystallized SnSe thin film by pulsed laser ablation of a mixed target of Sn and Se, the reversible discharge capacities of which were between 260 and 498 mAh g 1 in the range 0.012.5 V. Reversible formation and decomposition of Li 2 Se was found during the reaction of SnSe with lithium, which was completely different from the situation with SnO x and SnS x , whereby Li 2 O and Li 2 S were inactive. Park et al [74] reported the anode behaviors of Sn 4 N 3 thin films, which were deposited by reactive r. f. magnetron sputtering at various deposition temperatures. It was found that the rechargeability of the Sn 4 N 3 thin films was improved as the irreversible capacity fraction was increased.…”
Section: Other Sn-based Composite Thin-film Anodesmentioning
confidence: 99%