Characteristics of TiN thin films grown by ALD using TiCl4 and NH3

Ahn, Cheol Hyoun; Cho, S. G.; Lee, H. J.; Park, K. H.; Jeong, Soon-Wook

doi:10.1007/bf03179261

Cited by 59 publications

(42 citation statements)

References 12 publications

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“…There is a non-negligible oxygen content in the TiN film, 24 at%. The oxygen origin is attributed to the impurity in the precursor TDMATi [28] and the relatively high base pressure of 100 mTorr present in the benchtop ALD system d. We note that the oxygen content is sufficiently low, lower than that reported (37 at%) which still resulted in low resistivity films 150 μΩ cm [17], and that such oxygen content is not expected to prevent metallic optical behavior. Additionally, the oxygen 1s peak region ( Figure 1e) has a peak that can be resolved into two peaks, one located at 528.4 eV indicative of TiON and another at 530.7 eV indicative of TiO2.…”

Section: Resultsmentioning

confidence: 63%

Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

et al. 2020

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Transition metal nitrides, like titanium nitride (TiN), are promising alternative plasmonic materials. Here we demonstrate a low temperature plasma-enhanced atomic layer deposition (PE-ALD) of non-stoichiometric TiN0.71 on lattice-matched and -mismatched substrates. The TiN was found to be optically metallic for both thick (42 nm) and thin (11 nm) films on MgO and Si <100> substrates, with visible light plasmon resonances in the range of 550–650 nm. We also demonstrate that a hydrogen plasma post-deposition treatment improves the metallic quality of the ultrathin films on both substrates, increasing the ε1 slope by 1.3 times on MgO and by 2 times on Si (100), to be similar to that of thicker, more metallic films. In addition, this post-deposition was found to tune the plasmonic properties of the films, resulting in a blue-shift in the plasmon resonance of 44 nm on a silicon substrate and 59 nm on MgO.

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Section: Resultsmentioning

confidence: 63%

Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

et al. 2020

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“…It would be a simple choice of using metal halides and NH 3 in a basic AB‐type ALD reaction for conductive metal nitride deposition, however many thermal ALD metal nitrides are deposited in the form of an insulator at their highest oxidation state. Apart from TiN,8, 17–19, 24, 27, 31–34 only NbN x , 30, 35–38 MoN x ,8, 36, 37 and WN x 9 have been successfully deposited as conductive material using NH 3 in an AB sequence via thermal ALD. The resistivity of these materials is somewhat higher than that of TiN, from several hundreds to thousands µΩ cm.…”

Section: Thermal Ald Metallization Processes With An Ab Sequencementioning

confidence: 99%

Recent Developments of Atomic Layer Deposition Processes for Metallization

Liu¹

2013

Chemical Vapor Deposition

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Atomic layer deposition (ALD) has become an enabling technology for a wide range of applications where depositions of high quality, conformal thin films are desired. The needs of conducting materials with tailored properties call for ALD metallization processes that can meet diverse requirements in various applications. Recent developments of ALD processes for conducting materials have led to some novel ALD chemistries. Most of the ALD binary materials are formed in a typical AB sequence from two reactants. More complex ternary and doped materials can be achieved according to the same AB sequence principle through nano‐lamination of two binary materials using three or more reactants. It is demonstrated that ternary and elemental materials can be deposited using two reactants with a basic ALD AB sequence. Furthermore, an ALD process is not limited to an AB sequence, an ABC sequence with a surface‐controlled ALD reaction is also possible. A double replacement reaction mechanism is proposed with examples of novel processes such as TaCxNy, WCx, and WNxCy. Recent developments of ALD metallization processes have opened up more opportunities of producing novel ALD materials for industrial applications.

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“…TiN layer, as a follow-up step, was deposited on top of the dielectric layer using the same ALD technique. With the chamber temperature maintained at 400 ∘ C, TiCl 4 and NH 3 gases were duly injected in the reaction chamber [15][16][17]. N 2 was used as a carrier gas which also acted as a purge gas at the same time.…”

Section: Methodsmentioning

confidence: 99%

Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

Najam

Ahmed

Ali

2016

Advances in Materials Science and Engineering

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Focusing on sub-10 nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal-oxide capacitors (MOSCAP) with carefully chosen Atomic Layer Deposition (ALD) process parameters. Gate element of the device has undergone a detailed postmetal annealed sequence ranging from 100°C to 1000°C. The applicability of ultrathin TiN on gate electrodes is established through current density versus voltage (J-V), resistance versus temperature (R-T), and permittivity versus temperature analysis. A higher process window starting from 600°C was intentionally chosen to understand the energy efficient behavior expected from ultrathin gate metallization and its unique physical state with shrinking thickness. The device characteristics in form of effective electronic mobility as a function of inverse charge density were also found better than those conventional gate stacks used for EOT scaling.

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Characteristics of TiN thin films grown by ALD using TiCl4 and NH3

Cited by 59 publications

References 12 publications

Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

Recent Developments of Atomic Layer Deposition Processes for Metallization

Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

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