Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

Ling, Shih Chun; Wang, Te Chung; Ko, Tsung-Shine; Lu, Tien−Chang; Kuo, Hao Chung; Wang, Shing Chung

doi:10.1016/j.jcrysgro.2007.12.013

Cited by 8 publications

(3 citation statements)

References 16 publications

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“…7,8) Non-polar GaN is particularly beneficial for UV and green light emitters, which exhibit significant piezoelectric polarization. 9,10) Many research groups have demonstrated nonpolar GaN LEDs using a-plane ð11…”

Section: Introductionmentioning

confidence: 99%

Ohmic contact to nonpolara-plane p-type GaN using Ni/Au

Kim

Lee

et al. 2014

Jpn. J. Appl. Phys.

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In this study, we examined the characteristics of Ni/Au (20 nm/80 nm) ohmic contacts to non-polar a-plane p-GaN as a function of annealing temperature. The current-voltage (I-V) curves were showed an upward curve with annealing when Ni/Au metals were used as ohmic metals to nonpolar p-GaN, which was similar to those of the other crystalline planes. The contact resistivity decreased from 2.36 to 6.95 ' 10 %3 Ω cm 2 . Secondary ion mass spectroscopy showed that the Ga atoms out-diffused from the GaN substrate after annealing at 400 °C, which led to the generation of Ga vacancies. The formation of Ga and N vacancies was found to be a competing process during annealing.

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Section: Introductionmentioning

confidence: 99%

Ohmic contact to nonpolara-plane p-type GaN using Ni/Au

Kim

Lee

et al. 2014

Jpn. J. Appl. Phys.

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“…There have been several reports on the double peak features from semipolar GaN multiple quantum wells (MQWs) mostly by the epitaxial lateral growth (ELO) method. [18][19][20] In those studies, the multiple or broad emission spectra could be affected by spatial inhomogeneity of In composition from different polarity, potential fluctuations from In-rich quantum dots, and current path from the defect distribution. However, the double peaks in this study seemed quite different from those published results.…”

Section: Introductionmentioning

confidence: 99%

Optical Characterization of Double Peak Behavior in 101̄1 Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates

Choi

Bae

Lee

et al. 2012

Jpn. J. Appl. Phys.

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{101̄1} semipolar GaN-based light-emitting diodes (LEDs) grown on 1° miscut m-plane sapphires substrates via metal organic chemical vapor deposition showed undulated surface morphology with ridges and valleys. On the ridge regions, two dominant emission peaks, one at a shorter wavelength (∼438 nm) and one at a longer wavelength (∼490 nm), were observed using electroluminescence and micro-photoluminescence. In the valley regions, the longer peak was observed to be significantly quenched due to the grain boundary. The origin of the longer peak is believed to be not only inhomogeneous distribution of In composition in multiple quantum wells (MQWs) but also strong localization around the ridge region. Moreover, thickness variation of faceted MQWs could be associated with the peak broadening in 101̄1 semipolar LEDs. The results were also confirmed by cathodoluminescence and cross-sectional transmission electron microscopy.

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“…For example, ð11 0 0Þ mplane GaN has recently been grown on g-LiAlO 2 substrates [7], and ð1 12 0Þ a-plane GaN has been grown on ð11 0 2Þ r-plane sapphire substrates [8]. Nonpolar GaN is probably particularly beneficial for UV and green light emitters which experience significant piezoelectric polarization [9,10]. The thickness of QW can be thicker than that is typically used for polar QW due to the absence of the built-in fields, so an improved carrier capture efficiency could be anticipated.…”

Section: Introductionmentioning

confidence: 99%