Characterization and Control of Defects in VCz GaAs Crystals Grown without B<sub>2</sub>O<sub>3</sub>Encapsulant

Kiessling, Frank M.

doi:10.1002/9783527632879.ch5

Search citation statements

Order By: Relevance

Paper Sections

Select...

Intrinsic Point Defect Engineering1

Parameter (Unit) Value1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2016

2023

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(2 citation statements)

References 91 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also the vertical Bridgman (VB) and vertical gradient freeze (VGF) techniques were introduced by using an extra source for the vapor phase control [23]. Vapor pressure-controlled HB, VB and VGF have been successfully used to grow near stoichiometric compound semiconductors, like CdTe [24] and GaAs crystals, the last even without boric oxide encapsulation of the melt surface [25]. Even at Czochralski growth of GaAs the stoichiometry control has been tested by using the vapor pressure-controlled Czochralski (VCz) technique [26].…”

Section: Intrinsic Point Defect Engineeringmentioning

confidence: 99%

Fundamentals and engineering of defects

Rudolph

2016

Progress in Crystal Growth and Characterization of Materials

View full text Add to dashboard Cite

Section: Intrinsic Point Defect Engineeringmentioning

confidence: 99%

Fundamentals and engineering of defects

Rudolph

2016

Progress in Crystal Growth and Characterization of Materials

View full text Add to dashboard Cite

“…These gallium impurities migrate through the melt to reach the interface, where they are continually captured during the crystal's growth. The propagation behavior of these gallium impurities, captured by the advancing interface, is intrinsically linked to v/G n [39]. A growth rate below a critical threshold can result in GaAs material devoid of impurities.…”

Section: Parameter (Unit) Valuementioning

confidence: 99%

Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method

Tang,

Chappa,

Vieira

et al. 2023

Crystals

View full text Add to dashboard Cite

In this study, an axisymmetric Czochralski furnace model for the LEC growth of gallium arsenide is presented. We produced 88 datasets through computational fluid dynamics simulations. Among the many parameters that affect crystal growth, a total of 13 input parameters were selected, including the geometry and material parameters of the hot zone (crucible, heaters, radiation shield, and crystal), as well as the process parameters (such as pulling and rotation rates, heating power, etc.). Voronkov criteria (v/Gn), interface deflection, and the average interface temperature gradient were selected as the output parameters. We carried out a correlation analysis between the variables and used decision trees to study the impact of the 13 input variables on the output variables. The results indicated that in the growth of gallium arsenide, the main factor affecting interface deflection and the average interface thermal gradients is the crucible rotation rate. For v/Gn, it is the pulling rate.

show abstract

Characterization and Control of Defects in VCz GaAs Crystals Grown without B₂O₃Encapsulant

Cited by 2 publications

References 91 publications

Fundamentals and engineering of defects

Fundamentals and engineering of defects

Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method

Contact Info

Product

Resources

About

Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3Encapsulant

Cited by 2 publications

References 91 publications

Fundamentals and engineering of defects

Fundamentals and engineering of defects

Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method

Contact Info

Product

Resources

About

Characterization and Control of Defects in VCz GaAs Crystals Grown without B₂O₃Encapsulant