Characterization and Design of Semiconductor Lasers Using Strain

Adams, A.R.; Heasman, KC; O’Reilly, Eoin P.

doi:10.1007/978-1-4757-0770-0_25

Cited by 8 publications

(4 citation statements)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has been shown [16,17] for several 1.5 µm wavelength strained-layer MQW lasers that the Auger component is the main component of the threshold current in long-wavelength lasers and is reduced by the application of hydrostatic pressure. In a loss-free laser, one would generally expect the radiative threshold current to increase with pressure as the bandgap increases [8]. This has indeed been observed for GaAs lasers [8,16] and will be discussed in section 3.3.1.…”

Section: Pressure Dependence Of Threshold Currentmentioning

confidence: 65%

“…In a loss-free laser, one would generally expect the radiative threshold current to increase with pressure as the bandgap increases [8]. This has indeed been observed for GaAs lasers [8,16] and will be discussed in section 3.3.1. By contrast, all the 1.5 µm devices show a remarkable decrease in threshold current with pressure.…”

Section: Pressure Dependence Of Threshold Currentmentioning

confidence: 65%

“…Hydrostatic pressure is a very useful tool to investigate the loss mechanisms in semiconductor lasers [7,8]. It increases the direct gap of the semiconductor at a rate of about 10 meV kbar −1 , thereby decreasing the emission wavelength of the laser.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The analysis of the variation of the threshold current with pressure in semiconductor quantum well lasers

Gönül

1999

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Since the loss mechanisms in a semiconductor laser are often strongly wavelength dependent and hydrostatic pressure can vary the bandgap, the pressure dependence of the threshold current can then provide a clear picture of the dominant loss mechanisms in a given laser structure. The pressure dependence of the optical confinement factor, band structure, transparency and threshold carrier density and the combined effect of these on both radiative and non-radiative current contributions have been evaluated for lasers operating at a range of wavelengths using basic equations which makes our analysis particularly attractive owing to its simplicity and ability to predict the main effects involved. We investigate in particular the predicted pressure dependence of several Auger processes in long-wavelength (1.55 µm) lasers. It is found that the rate of decrease of phonon-assisted Auger recombination with pressure is close to that observed experimentally, implying that phonon-assisted Auger is the dominant loss mechanism.

show abstract

Section: Pressure Dependence Of Threshold Currentmentioning

confidence: 65%

Section: Pressure Dependence Of Threshold Currentmentioning

confidence: 65%

See 1 more Smart Citation

The analysis of the variation of the threshold current with pressure in semiconductor quantum well lasers

Gönül

1999

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…In a loss-free laser, we would generally expect the radiative threshold current to increase with pressure as the bandgap increases [55]. P-based laser devices show a remarkable decrease in threshold current with pressure.…”

Section: Pressure Dependence Of Threshold Currentmentioning

confidence: 99%

A theoretical comparison of the pressure dependence of the threshold current of phosphorus-, aluminium- and nitrogen-based 1.3 µm lasers

Gönül

Oduncuoğlu

2003

Semicond. Sci. Technol.

View full text Add to dashboard Cite

A comparative study of the three competing laser materials, InGaAsP-InP, AlGaInAs-InP and InGaAsN-GaAs, has been undertaken, for the first time, involving threshold characteristics with pressure. In our theoretical study we investigate the factors that influence the material gain performance, the threshold characteristics and the pressure dependence of each of the laser systems. We find that AlGaInAs and InGaAsN active layer materials have substantially better material gain performance than the commonly used InGaAsP at room temperature. Both radiative and non-radiative current contributions for laser systems are compared using basic equations, which makes our analysis particularly attractive owing to its simplicity and ability to predict the main effects involved. We have found that the estimated variation of phonon-assisted Auger rates with pressure in the N-based system has a slower decrease than that of the other two laser systems. The threshold carrier density n th in the N-based system increases with pressure whereas it decreases in Al-and P-based laser systems. This opposite variation changes the overall behaviour of the threshold current in these three competing laser systems. Our theoretical calculations indicate a significant increase of the radiative to non-radiative recombination current in the N-based laser system. This result highlights the intrinsic superiority of the N-based laser system.

show abstract

Hydrostatic Pressure Investigations of Quantum-Well Optoelectronic Devices

Adams

1991

NATO ASI Series

View full text Add to dashboard Cite

Characterization and Design of Semiconductor Lasers Using Strain

Cited by 8 publications

References 50 publications

The analysis of the variation of the threshold current with pressure in semiconductor quantum well lasers

The analysis of the variation of the threshold current with pressure in semiconductor quantum well lasers

A theoretical comparison of the pressure dependence of the threshold current of phosphorus-, aluminium- and nitrogen-based 1.3 µm lasers

Hydrostatic Pressure Investigations of Quantum-Well Optoelectronic Devices

Contact Info

Product

Resources

About