The analysis of the variation of the threshold current with pressure in semiconductor quantum well lasers

Gönül, B.

doi:10.1088/0268-1242/14/7/311

Cited by 12 publications

(4 citation statements)

References 30 publications

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“…The use of realistic band structure yields higher values of the transparency carrier density than those found with parabolic approximation, because of the differing shape of the real bands. Although this simple parabolic band model ignores many features in the real band structure, it should nevertheless be useful for obtaining a theoretical trend which is in good agreement with the measurements [29][30][31][32][33][34]. The band edge peak gain, G max , for electron and hole carrier density n at the quantum well band edge is given by [35]…”

Section: Idealized Band Modelmentioning

confidence: 74%

Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasers

Oduncuoğlu

Dindaroglu

Yagdiran

2003

Semicond. Sci. Technol.

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We investigate the effect of doping on the parameters of transparency carrier density and peak gain of GaInNAs/GaAs quantum well lasers emitting at 1.3 µm and compare the results with that of an equivalent nitrogen-free InGaAs/GaAs structure. A significant reduction in the transparency carrier density by p-type doping and an increase in gain by n-type doping are observed for GaInNAs/GaAs contrary to nitrogen-free InGaAs/GaAs. The results are analysed using the band-anti-crossing model for band gap, effective mass and simple approximate expressions for carrier density and optical gain. Our calculations show that doped III-N-V quantum well active layers may have certain benefits to lasers.

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Section: Idealized Band Modelmentioning

confidence: 74%

Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasers

Oduncuoğlu

Dindaroglu

Yagdiran

2003

Semicond. Sci. Technol.

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“…The use of a realistic band structure yields higher values of the threshold carrier density than those found with parabolic approximation, because of the differing shape of the real bands. Although this simple parabolic band model ignores many features in the real band structure, it should nevertheless be useful for obtaining a theoretical trend that is in good agreement with the measurements [24][25][26][27][28][29].…”

Section: Idealized Band Modelmentioning

confidence: 81%

“…increases with pressure since hydrostatic pressure increases the bandgap. is predicted to vary with the bandgap as ≈ CE g 2 according to the three-layer waveguide model [28]. C is a material constant and is essentially independent of pressure.…”

Section: Pressure Dependence Of the Optical Confinement Factormentioning

confidence: 99%

A theoretical comparison of the pressure dependence of the threshold current of phosphorus-, aluminium- and nitrogen-based 1.3 µm lasers

Gönül

Oduncuoğlu

2003

Semicond. Sci. Technol.

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A comparative study of the three competing laser materials, InGaAsP-InP, AlGaInAs-InP and InGaAsN-GaAs, has been undertaken, for the first time, involving threshold characteristics with pressure. In our theoretical study we investigate the factors that influence the material gain performance, the threshold characteristics and the pressure dependence of each of the laser systems. We find that AlGaInAs and InGaAsN active layer materials have substantially better material gain performance than the commonly used InGaAsP at room temperature. Both radiative and non-radiative current contributions for laser systems are compared using basic equations, which makes our analysis particularly attractive owing to its simplicity and ability to predict the main effects involved. We have found that the estimated variation of phonon-assisted Auger rates with pressure in the N-based system has a slower decrease than that of the other two laser systems. The threshold carrier density n th in the N-based system increases with pressure whereas it decreases in Al-and P-based laser systems. This opposite variation changes the overall behaviour of the threshold current in these three competing laser systems. Our theoretical calculations indicate a significant increase of the radiative to non-radiative recombination current in the N-based laser system. This result highlights the intrinsic superiority of the N-based laser system.

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“…where B is the bimolecular radiative recombination coefficient between electrons and holes and according to [13,14] is equal to…”

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confidence: 99%

Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

Bajda

Piechal

Dybała

et al. 2011

Physica Status Solidi (b)

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Wavelength dependent gain has been calculated for InGaAs/ GaAs quantum-well (QW) lasers as a function of hydrostatic pressure and temperature. The shift of the gain maximum for such laser is equal to À140 nm by increasing the pressure up to 20 kbar and À60 nm by cooling down from 300 to 100 K. The width of the gain curve (determining the possible tuning range with external grating) is significantly reduced at low temperatures and (to a lower extent) at high pressures. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.1 Introduction Laser diodes (LDs) can be wavelength tuned in the external resonator [1,2] by forcing the laser to oscillate at a frequency determined by some external reflector (diffraction grating, fiber Bragg reflector, etc.) The available tuning range is determined by the width of the positive net gain. The other possible tuning method consists in shifting the whole gain curve by external parameters like pressure or temperature. These methods can be combined, i.e., pressure/temperature tuning can be performed for the external cavity laser tuned by the grating [3,4]. This allows for very wide tuning range with single-mode operation and good beam quality. It turns out that the laser tuning by pressure/temperature may increase the range obtained by the grating. However, it is important to determine how the width (and shape) of the gain curve changes with pressure or with temperature, which has been the purpose of the present paper. Our considerations have been exemplified for the typical 980 nm InGaAs/GaAs quantum-well (QW) laser, for which we previously calculated the threshold currents as a function of pressure and temperature [5]. Pressure and temperature have been widely used for the characterization of LDs [6-9], allowing to identify different recombination

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The analysis of the variation of the threshold current with pressure in semiconductor quantum well lasers

Cited by 12 publications

References 30 publications

Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasers

Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasers

A theoretical comparison of the pressure dependence of the threshold current of phosphorus-, aluminium- and nitrogen-based 1.3 µm lasers

Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

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