Characterization and modeling of hysteresis phenomena in high K dielectrics

Leroux, C.; Mitard, J.; Ghibaudo, G.; Garros, X.; Reimbold, G.; Guillaumor, B.; Martín, F.

doi:10.1109/iedm.2004.1419276

Cited by 87 publications

(53 citation statements)

References 2 publications

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“…When there were electron trap sites, some of the accumulated carriers in the channel were trapped, resulting in a drop of the current (I DS ). The amount of charge trapping at the interface and/or bulk region of a semiconductor can be compared with the drop of I DS during the pulse width modulation (PWM) [17][18][19]. In contrast, in the case of DC I-V measurement, the charge carriers are continuously trapped during the rise in V GS , which causes a lower I DS compared to that in the pulsed I-V measurement.…”

Section: Resultsmentioning

confidence: 99%

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Nam

Kim

Cho

et al. 2016

Journal of Information Display

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Park (2016) Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium-gallium-zinc oxide thin-film transistor, Journal gate dielectric exhibit poor transistor characteristics, such as low mobility, a high subthreshold slope, and huge hysteresis. Through DC and short-pulsed current-voltage (I-V) measurements, it was revealed that the degradation of the transistor performance stems from the charging and discharging phenomenon at the interface traps located in the interface between the a-IGZO semiconductor and the Al 2 O 3 gate insulator. It was found that the low-temperature Al 2 O 3 atomic layer deposition processed film contains a higher density of hydrogen atoms compared to high-deposition-temperature films. The study results show that a high concentration of hydrogen atoms can passivate the defect sites in the interface and bulk, which produces excellent transistor characteristics. This study demonstrated that hydrogen has a beneficial effect on the defect passivation for oxide TFTs. ARTICLE HISTORY

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Section: Resultsmentioning

confidence: 99%

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Nam

Kim

Cho

et al. 2016

Journal of Information Display

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“…Four basic test set-up configurations have been employed to execute many of the pulse-based methodologies reported in the literature [30,[70][71][72]. In two of these configurations, the MOSFET is operated in an inverter circuit with a load resistor arranged in two ways: 1) a standard resistor placed in series between V dd and the drain of the MOSFET as shown in Fig.…”

Section: Instrumentation Configurationsmentioning

confidence: 99%

“…This allows the drain current to be measured across the sense resistor, R. The fourth measurement incorporates a current amplifier in series between common ground and the source of the MOSFET (Fig. 4(d)) [70].…”

Section: Instrumentation Configurationsmentioning

confidence: 99%

“…3(a)), the pulsed I-V methodology was introduced to quantify the transient charge trapping as well as to measure "intrinsic" (i.e., trapping-free) device characteristics [30,[70][71][72]. …”

Section: Fast Transient Charge Trappingmentioning

confidence: 99%

“…While significant progress has been made in fabricating high-κ gate stacks with less charge trapping [66][67][68][69], pulse-based characterization techniques [30,[70][71][72][73] remain critically important in understanding charge trapping processes for low power applications, memory cells, etc. This review addresses pulsed currentvoltage (I-V) characterization and analysis approaches.…”

Section: Introductionmentioning

confidence: 99%

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The Pulsed I_d-V_gmethodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

Young¹,

Heh

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et al. 2010

JSTS:Journal of Semiconductor Technology and Science

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Synaptic Characteristics of Fully Depleted Silicon‐on‐Insulator Metal‐Oxide‐Semiconductor Field‐Effect Transistors and Synapse‐Neuron Arrayed Neuromorphic Hardware System

Jeon,

Kim,

Akinwande

et al. 2024

Advanced Intelligent Systems

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A fully depleted silicon‐on‐insulator (FDSOI) metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) device is investigated as for an electronic synapse emulating the synaptic functions of the human brain with stable characteristics. Gate‐last processed FDSOI MOSFET with a high‐k/metal gate stack features a memory window of 103. Synaptic conductance is stably regulated by utilizing the FDSOI MOSFET, which offers the advantage of mitigating leakage current when compared to bulk Si MOSFET. Short‐ and long‐term plasticity are investigated by applying engineered pulse, verifying the long‐term synaptic properties of pattern recognition processes. With controllable synaptic conductance, the trade‐off between conductance change and linearity regarding the recognition rate is evaluated, attaining a recognition rate of 0.83. To verify the pre‐ and post‐synaptic weights within a real hardware‐based neuromorphic system, 5 × 6 FDSOI field‐effect transistor (FET) synapse array is interconnected to 10 × 10 leaky integrate‐and‐fire (LIF) neuron array. The synaptic plasticity of FDSOI MOSFET in post‐neurons following neuron firing in the neuron device is successfully demonstrated. These results indicate that FDSOI MOSFET devices could be applicable as synapse devices due to controllability and capability to realize signal transmissions and self‐learning processes simultaneously and used to mimic a synapse neuron network system by configuring a hardware system interconnected with the LIF neuron.

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Characterization and modeling of hysteresis phenomena in high K dielectrics

Cited by 87 publications

References 2 publications

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

The Pulsed I_d-V_gmethodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

Synaptic Characteristics of Fully Depleted Silicon‐on‐Insulator Metal‐Oxide‐Semiconductor Field‐Effect Transistors and Synapse‐Neuron Arrayed Neuromorphic Hardware System

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Characterization and modeling of hysteresis phenomena in high K dielectrics

Cited by 87 publications

References 2 publications

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

The Pulsed Id-Vgmethodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

Synaptic Characteristics of Fully Depleted Silicon‐on‐Insulator Metal‐Oxide‐Semiconductor Field‐Effect Transistors and Synapse‐Neuron Arrayed Neuromorphic Hardware System

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The Pulsed I_d-V_gmethodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics