Characterization and Modeling of Intermodulation Linearity in a 200 GHz SiGe HBT Technology

Second Order Intermodulation Linearity of a 200 GHz SiGe HBT Technology

“…Fig. 1 shows the measurement setup [7]. Two synced signal generators are used to provide the input two tones, and an Agilent 8563EC spectrum analyzer is used to measure the output at fundamental and intermodulation frequencies.…”

“…Attenuators are used as the minimum output power of the Agilent 8257D signal generators used is -20 dBm, which may be too high for intercept point extrapolation. Power losses in signal paths are calibrated using the procedures described in [7].…”

A comparison of intermodulation distortion performance of HICUM and VBIC compact models for pnp SiGe HBTs on SOI

“…Unfortunately, modeling these harmonic-generation effects in a CAD environment is a very complex problem, and no clear answer presently exists on which bipolar compact model best predicts these trends accurately. The authors of [4] address this issue briefly, but their treatment does not include comprehensive large-signal performance and fifth-order intermodulation terms. Keeping the superior linearity of pnp SiGe HBTs in focus, the present paper attempts to answer the question of which compact model is preferred in the context of C-SiGe platforms, by comparing HICUM [5] and VBIC [6] compact models we have built for the pnp SiGe HBT in a leading-edge C-SiGe on SOI platform.…”

Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors

“…A 304 GHz peak f T is reached at 0.45 mA/ µm at V DS = 1.05 V. Figure 1c shows typical I DS − V DS characteristics. Figure 2a shows the experimental setup used, which is similar to the setup in [7]. Broadband 50 Ω terminations are used so that they do not filter out the second order harmonics which may remix with the fundamental output to produce third order intermodulation (IM 3).…”