Characterization and Modeling of RF-Performance $(f_{T})$ Fluctuation in MOSFETs

Kim, Han-Su; Chung, Chul; Lim, Jinsung; Park, Kangwook; Oh, Hansu; Kang, Ho–Kyu

doi:10.1109/led.2009.2023826

Cited by 9 publications

(5 citation statements)

References 10 publications

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“…Also, it is noted that Eqs. (13) and (14) have been, respectively, derived by using Eqs. (11) and 12based on the up-to-date analytical model of statistical variation in MOSFET's parameter [20] instead of the traditional one.…”

Section: Variation In Gate Capacitance (C G )mentioning

confidence: 99%

“…According to [21], f T can be defined as the frequency at which the small-signal current gain of the device drops to unity, while the source and drain terminals are held at ground and can be related to C g by the following equation [13] f…”

Section: Variation In Transition Frequency (F T )mentioning

confidence: 99%

“…Unfortunately, C g , f T , and f max have not been considered even though they also exist and greatly affect the high-frequency performances of such MOSFET-based circuits/systems. Therefore, analytical models of variations in those major high-frequency characteristics have been performed [13][14][15][16][17]. In [13], an analytical model of variation in f T derived as a function of the variation in C g has been proposed where only strong inversion MOSFET has been focused.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, analytical models of variations in those major high-frequency characteristics have been performed [13][14][15][16][17]. In [13], an analytical model of variation in f T derived as a function of the variation in C g has been proposed where only strong inversion MOSFET has been focused. However, this model is not comprehensive, as none of any related physical levels variable of the MOSFET has been involved.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Comprehensive Analytical Models of Random Variations in Subthreshold MOSFET’s High-Frequency Performances

Banchuin¹

2018

Complementary Metal Oxide Semiconductor

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Subthreshold MOSFET has been adopted in many low power VHF circuits/systems in which their performances are mainly determined by three major high-frequency characteristics of intrinsic subthreshold MOSFET, i.e., gate capacitance, transition frequency, and maximum frequency of oscillation. Unfortunately, the physical level imperfections and variations in manufacturing process of MOSFET cause random variations in MOSFET's electrical characteristics including the aforesaid high-frequency ones which in turn cause the undesired variations in those subthreshold MOSFET-based VHF circuits/systems. As a result, the statistical/variability aware analysis and designing strategies must be adopted for handling these variations where the comprehensive analytical models of variations in those major high-frequency characteristics of subthreshold MOSFET have been found to be beneficial. Therefore, these comprehensive analytical models have been reviewed in this chapter where interesting related issues have also been discussed. Moreover, an improved model of variation in maximum frequency of oscillation has also been proposed.

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Section: Variation In Gate Capacitance (C G )mentioning

confidence: 99%

Section: Variation In Transition Frequency (F T )mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Comprehensive Analytical Models of Random Variations in Subthreshold MOSFET’s High-Frequency Performances

Banchuin¹

2018

Complementary Metal Oxide Semiconductor

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“…The cut-off frequency was affected more by the gate capacitance variation. Comparing with the fluctuations of rf performance with different production lots, 18 much more cautions have to be given to the variations by postprocess induced stress.…”

mentioning

confidence: 99%

Influence of uniaxial mechanical stress on the high frequency performance of metal-oxide-semiconductor field effect transistors on (100) Si wafer

Han

Koganemaru

Ikeda

et al. 2010

Applied Physics Letters

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The effects of uniaxial mechanical stress on the radio frequency performance of n-and p-metal-oxide-semiconductor field effect transistors ͑MOSFETs͒ are investigated up to 10 GHz. Under tensile stress, the gate transconductance ͑gm͒ increases in the n-MOSFETs while it decreases in the p-MOSFETs, whereas the results were vice versa for compressive stress. The total gate capacitance ͑C G ͒ extracted from scattering parameters increases ͑decreases͒ under tensile ͑compressive͒ stress for both n-and p-MOSFETs, which is explained by the variation in the effective mass perpendicular to the Si/ SiO 2 interface. The cutoff frequency ͑f T ͒ varies in inverse proportion to the C G variation.

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Statistical variability in FinFET devices with intrinsic parameter fluctuations

Hwang

Han

2010

Microelectronics Reliability

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Characterization and Modeling of RF-Performance $(f_{T})$ Fluctuation in MOSFETs

Cited by 9 publications

References 10 publications

Comprehensive Analytical Models of Random Variations in Subthreshold MOSFET’s High-Frequency Performances

Comprehensive Analytical Models of Random Variations in Subthreshold MOSFET’s High-Frequency Performances

Influence of uniaxial mechanical stress on the high frequency performance of metal-oxide-semiconductor field effect transistors on (100) Si wafer

Statistical variability in FinFET devices with intrinsic parameter fluctuations

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