Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress

Chiu, Jung Piao; Li, Chi Wei; Wang, Ta-Hui

doi:10.1063/1.4748108

Cited by 3 publications

(2 citation statements)

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“…As the device dimensions continuously shrink, the traps in the gate oxide have attracted increasing attention due to their severe impacts on the reliability and variability of nano-scaled devices. [1][2][3][4][5][6][7][8] Most previous work on this topic focused on the switching behaviors of single trap (e.g., random telegraph noise 1,2 ), or the supposition effects of multi-traps, such as flicker noise and stochastic reliability of bias temperature instability. 3,4 However, traps are considered to be independent in most previous work, in which the supposition effects are simply treated as summation of the amplitudes of individual traps.…”

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confidence: 99%

“…[1][2][3][4][5][6][7][8] Most previous work on this topic focused on the switching behaviors of single trap (e.g., random telegraph noise 1,2 ), or the supposition effects of multi-traps, such as flicker noise and stochastic reliability of bias temperature instability. 3,4 However, traps are considered to be independent in most previous work, in which the supposition effects are simply treated as summation of the amplitudes of individual traps. Only few studies 6,7 reveal that there is coupling effect between different traps, which should not be ignored in the prediction of trap occupation probability.…”

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confidence: 99%

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Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics

Ren

Wang

Jiang

et al. 2014

Applied Physics Letters

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Published by the AIP Publishing Articles you may be interested inInvestigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metaloxide-semiconductor field-effect transistors with HfO2/metal gate stacks Appl. Phys. Lett. 102, 012106 (2013); 10.1063/1.4773914 Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxidesemiconductor field-effect transistors Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant Appl. Phys. Lett. 96, 142110 (2010); 10.1063/1.3384999 Anomalous negative bias temperature instability behavior in p -channel metal-oxide-semiconductor field-effect transistors with Hf Si O N ∕ Si O 2 gate stack Appl. Phys. Lett. 90, 233505 (2007); 10.1063/1.2745649Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors

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