Characterization and ozone-induced coloration of ZnxNi1−xO thin films prepared by sol–gel method

Determination of certain sol-gel growth parameters of nickel oxide films

“…In recent years, nickel oxide (NiO) which is a member of transition metal oxides has been greatly used in many apparatus [1] such as magnetic materials, catalysts, smart windows, solar cells [2][3][4][5] as well as electrochromic devices [6] because of its thermal and chemical insistence, low cost, superior electrical, optical and antiferromagnetic properties [7][8][9]. NiO, one of a few p-type metal oxide semiconductors, has a large band gap varied between 3.6 to 4.0 eV [10].…”

Effect of high energy ball milling on the reduction of nickel oxide by zinc powder

“…Zinc oxide is n-type semiconducting oxide with a wide band gap semiconductor (3.37 eV) and has a large excitation binding energy (60 meV) [15,16]. The optical band gaps of bulk NiO is 4.00 eV, Furthermore nickel oxide films are suitable for magneto-resistance sensors, chemical sensors, electrochromic devices and transport p-type semiconducting layer, smart windows and dye sensitized photocathode [14,17]. Recent investigations on ZnO ceramics show that their thermoelectric properties can be improved by substitution with aluminium, titanium, antimony or nickel [15].…”

Effects of Zn‐dopant on structural properties and electrochromic performance of sol‐gel derived NiO thin films

“…It has been reported that the introduction of selective element with comparably close ionic radius to Ni 2+ such as Li + [8], Al 3+ [10], Cu 2+ [18], and W 6+ result in the significant decreasing crystallinity and domination of amorphous phase of NiO films. The incorporation of Zn additive into NiO could deter the crystallization of the films because of the lattice distortion [19], which is beneficial for the electrochromic performance of NiO-based films. The XPS survey spectrum of 20%Zn-doped NiO film is illustrated in Fig.…”