Characterization and simulation studies on high tilt ion implantation for precision halo implant applications

Guo, B. N.; Zhao, Zhiyong; Falk, S.; Liu, J.; Shim, K. H.; Jeong, U.; Mehta, S.

doi:10.1016/j.nimb.2007.03.029

Cited by 5 publications

(6 citation statements)

References 8 publications

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“…However, the recent studies [2] have found that an offset in halo dopant positioning directly alters the net channel doping profile, which leads to variations in electrical parameters. This is particular true if the initial angle is near a major Si lattice channeling direction, e.g.…”

Section: Figure 2: Halo Implant -Only Two Quarters Of Total Dose For mentioning

confidence: 99%

“…A detailed study on the ion beam channeling behavior near <112> axial channeling has been reported [2] and has been adopted in Fabs for advanced high tilt angle process control. Table 2 Process monitor transistor Vt shift in response to the halo implant angle variation.…”

Section: Figure 2: Halo Implant -Only Two Quarters Of Total Dose For mentioning

confidence: 99%

“…The dopant profiles usually follow either a single or double Pearson IV distributions depending on whether incident ion beam angles align with crystal channeling directions or not . When an implant angle is not controlled correctly due to hardware failure or process setup fault, the distribution of carrier concentrations will shift, resulting in either non-functional or bad performance devices [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…Each rotation receives a quarter of the dose. Reseach results in the recent years have shown that the device performance can be affected if the implant angle varies even by 0.5 o [2]. Also, at a high implant angle, the wafer orientation angle is critical since it determines which side of the device gets the implant.…”

Section: Introductionmentioning

confidence: 99%

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Precision control of halo implantation for scaling-down ULSI manufacturing

Wang¹,

Liu²,

Guo³

et al. 2005

ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005.

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This work is a study on process control of halo implants of MOS transistors in the ULSI manufacturing. We present the electrical test data corresponding to halo implant changes on the NMOS and PMOS transistors of a high density, high performance flash memory device of 0.11 µm technology node. Device threshold voltage is found to be sensitive to small variationsins of both implant and wafer orientation angles. It is observed that the PMOS device is more sensitive to angle changes than the NMOS device. A TCAD model is made to simulate the device characteristics and the device performance is correlated.

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Section: Figure 2: Halo Implant -Only Two Quarters Of Total Dose For mentioning

confidence: 99%

Section: Figure 2: Halo Implant -Only Two Quarters Of Total Dose For mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Precision control of halo implantation for scaling-down ULSI manufacturing

Wang¹,

Liu²,

Guo³

et al. 2005

ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005.

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“…By changing the dose, energy and rotation of these implants, the profile and the electrical characteristics of the MOSFET device can be modified [4]. For the implantation angle, angle variation of even 0.5° can affect the device performance and characteristics [5].…”

Section: Introductionmentioning

confidence: 99%

Application of Taguchi Method in Designing a 22nm High-k/Metal Gate NMOS Transistor

Maheran

Menon

Ahmad

et al. 2014

AMR

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This paper reports on the application of Taguchi method in modelling a 22nm gate length high-k/metal gate NMOS transistor. The Nominal-the-Best Signal-to-noise Ratio (SNR) using Taguchis optimization technique was utilized to optimize the process parameters in determining the best threshold voltage (Vth) value where it was used as the evaluation variable. The high permittivity material (high-k) / metal gate device consists of titanium dioxide (TiO2) and tungsten silicide (WSix) respectively. The simulation work was executed using a TCAD simulator, which consist of ATHENA and ATLAS as a process and device simulator respectively. In this research, the Halo implantation tilting angle was identified as the most influencial factor in affecting the Vth with a percentage of 87%, followed by the oxide growth anneal temperature (8%), the metal gate anneal temperature (4%) and lastly the Halo implantation dose (1%). As a conclusion, the Halo tilting angle is the dominant factor in optimizing the process parameter. Meanwhile the Halo implantation dose can be considered as an adjustment factor in order to achieve the target Vth value of 0.289 V which is in line with projections made by the International Technology Roadmap for Semiconductors (ITRS).

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