Characterization and versatile applications of low hydrogen content SiOCN grown by plasma-enhanced chemical vapor deposition

Hamm, Steven C.; Waidmann, Jacob; Mathai, Joseph; Gangopadhyay, Keshab; Currano, Luke J.; Gangopadhyay, Shubhra

doi:10.1063/1.4894843

Cited by 13 publications

(3 citation statements)

References 74 publications

(81 reference statements)

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“…P-type silicon (001) substrates were chosen for all experiments except for Rutherford backscattering spectrometry (RBS) where glassy carbon wafers were employed to improve the sensitivity for light elements. The adhesion quality of SiCN thin films deposited on silicon substrates was found to be better than on glass substrates, likely due to a smaller difference in the coefficient of thermal expansion between the SiCN film and the substrate [21].…”

Section: Sample Fabricationmentioning

confidence: 96%

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Process-dependent mechanical and optical properties of nanostructured silicon carbonitride thin films

2019

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Amorphous hydrogenated silicon carbonitride (a-SiCN:H) thin films were grown using electron cyclotron resonance chemical vapour deposition using a mixture of methane, nitrogen, and silane as precursors. The origin of the variation of macroscopic properties such as hardness (H), elastic modulus (E), photoluminescence (PL), and the optical band gap was investigated through their correlation with the microscopic features of a-SiCN:H thin films as a function of the process parameters, including the deposition temperature and methane gas flow rate. From a microstructural perspective, the thin films were investigated using x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, elastic recoil detection, transmission electron microscopy, and x-ray diffraction. It is verified that an increase of the substrate temperature resulted in the substitution of hydrogen atoms mainly by carbon atoms, causing the density of the silicon carbide-related structures to increase in the amorphous structure of the a-SiCN:H thin films. Hardness and elastic modulus were found to increase with the deposition temperature and decreased with an increase of the methane gas flow during the deposition, resulting in higher carbon content in the films. The observed changes are ascribed to the reduced density of the weak hydrogen terminated bonds and the variation of the relative bond density of Si–C to Si–N bonds. In addition, the thin films were depth profiled using a slow positron beam to investigate the role of vacancies. The observed increase of the positronium formation with increasing deposition temperature was found to correlate with the variation of PL, where an enhancement of the visible emission originating from carbon-related defects was observed. A set of optimized process parameters to fabricate a-SiCN:H thin films with improved visible emission and hardness properties is suggested.

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Section: Sample Fabricationmentioning

confidence: 96%

“…It is worth mentioning that polymer-derived SiCN ceramics, which require higher pressure and temperature processing [20], are not of interest for silicon photonics. The mechanical aspects of SiCN thin films processed using existing CMOS compatible technology were investigated in various works [21,22].…”

Section: Introductionmentioning

confidence: 99%

Process-dependent mechanical and optical properties of nanostructured silicon carbonitride thin films

2019

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“…Hydrogen being a diatomic light gas can easily diffuse through any material while carrying out the synthesis process. Thus, increase in H 2 flow rate had resulted in (a) improving the hardness (b) reducing the wear rate and friction coefficient of the SiCN thin film [6,7]. Sundaram et al [8] found an increasing trend of hardness and young's modulus values of the SiCN thin films with an increase in the nitrogen flow rate.…”

Section: Introductionmentioning

confidence: 99%

A DoE–TOPSIS meta-model for parametric optimization of silicon carbonitride (SiCN) thin film deposition process

Kumar

Das

Chakraborty

et al. 2019

J Braz. Soc. Mech. Sci. Eng.

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Silicon carbonitride (SiCN) thin films were deposited on p-type Si(100) substrate by thermal chemical vapour deposition process using SiC and Si 3 N 4 nanopowder as the source, and mixture of N 2 and H 2 as precursor gases. For the experimental design, Taguchi's L 25 orthogonal array was used considering H 2 flow rate, N 2 flow rate and deposition temperature as the input deposition parameters, while taking into account, I D /I G ratio, hardness and Young's modulus as the responses. Design of experiments integrated with technique for order of preference by similarity to ideal solution (TOPSIS) method was applied to develop a corresponding meta-model so as to obtain the optimal parametric combination of the deposition process with respect to the computed TOPSIS score. It was found that optimal parametric combination of H 2 flow rate as 60 sccm, N 2 flow rate as 100 sccm and deposition temperature as 1300 °C results in improved values of I D /I G ratio, hardness and Young's modulus. The microstructure, chemical bonding and mechanical properties of SiCN thin films were characterized using Atomic force microscopy, Raman spectroscopy and nano-indentation techniques. As the developed meta-model is solely based on the analysis of the data obtained from experimentation, it is more practical and immune of introducing any additional parameter in the analysis. Moreover, the developed surface plots will further help the process engineer in selecting the most suitable combination of deposition parameters for achieving desirable responses.

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Carbon‐Rich Plasma‐Deposited Silicon Oxycarbonitride Films Derived from 4‐(Trimethylsilyl)morpholine as a Novel Single‐Source Precursor

Ermakova,

Tsyrendorzhieva,

Mareev

et al. 2024

ChemPlusChem

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4‐(trimethylsilyl)morpholine O(CH 2CH 2) 2NSi(CH3) 3 (TMSM) was investigated as a single‐source precursor for SiCNO films synthesis. Optical emission spectroscopy of plasma generated from TMSM/He, TMSM/H 2, and TMSM/NH 3 gas mixtures revealed the presence of N 2, CH, H, CN, and CO species. The last two are suggested to be responsible for the lowering of carbon concentration in the films in comparison with the precursor. The refractive index ranged from 1.5 to 2.0, and bandgap varied from 2.0 to 4.6 eV, which pointed that some of the films can be used as antireflective coatings in silicon photovoltaic cell technologies and electronic devices.

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Characterization and versatile applications of low hydrogen content SiOCN grown by plasma-enhanced chemical vapor deposition

Cited by 13 publications

References 74 publications

Process-dependent mechanical and optical properties of nanostructured silicon carbonitride thin films

Process-dependent mechanical and optical properties of nanostructured silicon carbonitride thin films

A DoE–TOPSIS meta-model for parametric optimization of silicon carbonitride (SiCN) thin film deposition process

Carbon‐Rich Plasma‐Deposited Silicon Oxycarbonitride Films Derived from 4‐(Trimethylsilyl)morpholine as a Novel Single‐Source Precursor

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