Characterization by TEM and ToF-SIMS of the oxide layer formed during anaphoretic paint electrodeposition on Al-alloys

Collinet-Fressancourt, Marion; Nuns, Nicolás; Bellayer, Séverine; Traisnel, Michel

doi:10.1016/j.apsusc.2013.04.023

Cited by 5 publications

(1 citation statement)

References 29 publications

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“…This is, for example, of importance in thin film technology, which is applied in the development of solar cells, thermoelectric devices, transistors or gas sensors. Invasive methods like secondary ion mass-spectrometry (SIMS), transmission electron microscopy (TEM) or glow-discharge optical emission spectrometry (GD-OES) are frequently used to investigate the elemental composition of layered structures, buried interfaces or dopant implants. − A comparison between the mentioned and various other depth profiling techniques in terms of their analytical capabilities for the investigation of Cu(In,Ga)Se 2 solar cell absorber layers is given in the work of Abou-Ras et al The authors conclude, that no single technique is “suitable for an unambiguous and quantitative elemental distribution analysis of a thin film with unknown compositional in-depth distribution” . Nevertheless, for the investigation of samples with unknown elemental depth distributions, the use of X-ray fluorescence (XRF) methods might be advantageous because of the quantitative, nonpreparative, and nondestructive properties and, thus, the possibility of complementary investigations of the same sample.…”

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confidence: 99%

Laboratory Setup for Scanning-Free Grazing Emission X-ray Fluorescence

et al. 2017

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Grazing incidence and grazing emission X-ray fluorescence spectroscopy (GI/GE-XRF) are techniques that enable nondestructive, quantitative analysis of elemental depth profiles with a resolution in the nanometer regime. A laboratory setup for soft X-ray GEXRF measurements is presented. Reasonable measurement times could be achieved by combining a highly brilliant laser produced plasma (LPP) source with a scanning-free GEXRF setup, providing a large solid angle of detection. The detector, a pnCCD, was operated in a single photon counting mode in order to utilize its energy dispersive properties. GEXRF profiles of the Ni-L line of a nickel-carbon multilayer sample, which displays a lateral (bi)layer thickness gradient, were recorded at several positions. Simulations of theoretical profiles predicted a prominent intensity minimum at grazing emission angles between 5° and 12°, depending strongly on the bilayer thickness of the sample. This information was used to retrieve the bilayer thickness gradient. The results are in good agreement with values obtained by X-ray reflectometry, conventional X-ray fluorescence and transmission electron microscopy measurements and serve as proof-of-principle for the realized GEXRF setup. The presented work demonstrates the potential of nanometer resolved elemental depth profiling in the soft X-ray range with a laboratory source, opening, for example, the possibility of in-line or even in situ process control in semiconductor industry.

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confidence: 99%