Characterization of 13 and 30μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

Despeisse, M.; Anelli, G.; Commichau, S.; Dissertori, G.; Garrigós, A.; Jarron, P.; Miazza, C.; Moraes, D.; Shah, A.; Wyrsch, Nicolas; Viertel, G.

doi:10.1016/j.nima.2003.11.022

Cited by 15 publications

(17 citation statements)

References 3 publications

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“…5). This technique was also used before EBIC measurements to characterize the detector charge collection speed for steady state detector biases [7]. Two of the degraded pixels (ch17, ch19) had a charge collection equal to 10% of the reference pixel (ch14).…”

Section: Resultsmentioning

confidence: 99%

Characterization of a thick layer a-Si:H pixel detector with TFA technology using a scanning electron microscope

Despeisse

Saramad

Ballif³

et al. 2006

Journal of Non-Crystalline Solids

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The electron beam induced current (EBIC) technique was used to characterize a 32 lm thick hydrogenated amorphous silicon n-i-p diode deposited on top of an ASIC, containing several channels of active feedback pre-amplifiers (AFP) with peaking time of 5 ns. The homogeneity of the sample together with the edge effects induced by the unevenness of the ASIC substrate were studied with low doses of 10-30 keV electron beam. The degradation of a-Si:H pixel detectors was measured with intense electron beam. Their charge collection and transient time were characterized with a 660 nm pulsed laser before and after the thermal annealing. All the diodes show approximately a full recovery of charge collection after thermal annealing.

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Section: Resultsmentioning

confidence: 99%

Characterization of a thick layer a-Si:H pixel detector with TFA technology using a scanning electron microscope

Despeisse

Saramad

Ballif³

et al. 2006

Journal of Non-Crystalline Solids

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“…However, sensors thicker than standard a-Si:H devices have to be deposited and fully depleted to provide adequate signal to noise ratio for particle detection. Sensors with a thickness above 50 μm can be grown but would necessitate more than 1.1 kV for full depletion and certainly be very hard to deplete [5]. Sensors with thickness up to about 30 μm were thus deposited in our studies.…”

Section: Thin Film On Asic Technology For Radiation Detectionmentioning

confidence: 99%

“…A TFA detector is built by consecutive depositions of n-doped, intrinsic and p-doped (n-i-p) a-Si:H films on top of the readout circuit ( Sensors were first successfully deposited on the AFP and MACROPAD circuits and the developed TFA detectors are presented in [5]- [6]. The aSiHtest circuit was designed in a quarter micron CMOS technology as a global test chip to fully characterize the TFA technology.…”

Section: The Asihtest Detectormentioning

confidence: 99%

“…The high reverse voltages needed to deplete the "thick" deposited a-Si:H sensors and the deposition on non-flat ASIC surface were shown to strongly increase the sensor's leakage current [5]- [6], enhancing mechanisms negligible in standard a-Si:H devices. These high currents prevent the full depletion of the deposited sensors, limiting the active volume of interaction and lowering the weighting field (and so the induced signal amplitude) as the non-depleted layer is non conductive.…”

Section: Leakage Current Mechanismsmentioning

confidence: 99%

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Hydrogenated Amorphous Silicon Deposited on the Asihtest Circuit for Radiation Detection

Despeisse¹,

Anelli²,

Jarron³

et al. 2008

Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications

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Radiation detectors were developed by depositing 20 μm thick hydrogenated amorphous silicon (a-Si:H) sensors directly on top of the so-called aSiHtest integrated circuit. This circuit was designed in a quarter micron CMOS technology as a global test circuit for this novel detector technology. The sensor leakage current turned out to be limiting the performance of the whole detector. Its detailed study is presented together with design techniques to reduce it. Direct detections of 10 to 50 keV electrons were demonstrated on integrated thin strip structures with a pitch down to 10 µm. Results are shown to understand the potential of the technology for ionizing radiation detection.

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“…Results obtained on thick a-Si:H sensors (up to 32.6 µm) deposited on a glass substrate are presented in [2]. TFA detectors developed on a MACROPAD and on an AFP chip showed leakage current up to 3 orders of magnitude higher than for similar sensors deposited on a glass substrate ( [11], [14]), showing a strong increase of the a-Si:H sensor leakage current linked to its deposition on an ASIC.…”

Section: A Electrical Characterization and Pixel Segmentationmentioning

confidence: 99%

Hydrogenated Amorphous Silicon Sensors Based on Thin Film on ASIC Technology

Despeisse

Moraes

Anelli

et al.

IEEE Nuclear Science Symposium Conference Record, 2005

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Characterization of 13 and 30μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

Cited by 15 publications

References 3 publications

Characterization of a thick layer a-Si:H pixel detector with TFA technology using a scanning electron microscope

Characterization of a thick layer a-Si:H pixel detector with TFA technology using a scanning electron microscope

Hydrogenated Amorphous Silicon Deposited on the Asihtest Circuit for Radiation Detection

Hydrogenated Amorphous Silicon Sensors Based on Thin Film on ASIC Technology

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