Hydrogenated Amorphous Silicon Sensors Based on Thin Film on ASIC Technology

Despeisse, M.; Moraes, D.; Anelli, G.; Jarron, P.; Kapłon, J.; Rusack, R.; Saramad, S.; Wyrsch, Nicolas

doi:10.1109/nssmic.2005.1596579

Cited by 6 publications

(5 citation statements)

References 15 publications

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“…The a-Si:H pin diode has been fabricated on top of an ASIC as the photo sensor. 88) However, the split-gate a-Si:H TFT can also be used as a photo sensor, which does not require the low dopant efficiency p þ thin film deposition step. 75) In addition, special materials or structures of the a-Si:H TFT can be used to detect other environmental parameters, such as the pH value in a solution or the components in a gas stream.…”

Section: Future Applications and Collaborationsmentioning

confidence: 99%

Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration

Kuo

2008

jjap

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Thin-film transistor (TFT) and ultra-large scale integrated circuit (ULSIC) have been compared and discussed with respect to the development history, technology trends, and applications. Detailed issues on materials, processes, and devices in the largearea TFT array fabrication and nano-size metal-oxide-semiconductor field effect transistors (MOSFETs) composed ULSIC on large wafers were also examined. The TFT fabrication processes were originally derived from ULSIC. However, there are many unique large-area processes and theories developed during the study of the TFT array fabrication, which can greatly benefit the future large wafer ULSIC production process. Although their future applications will be in different areas, there are opportunities that TFTs can be integrated into ULSIC products to enhance the functions and performance.

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Section: Future Applications and Collaborationsmentioning

confidence: 99%

Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration

Kuo

2008

jjap

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“…The thin-film hydrogenated amorphous silicon (a-Si:H) technology [3] allows the custom fit of amorphous silicon photodiode arrays to the geometry of the flow microfluidic channel. The low-temperature (below 200°C) technology plasma-enhanced chemical-vapor deposition (PECVD) [2] or hot wire chemical-vapor deposition (HWCVD) [4] allows deposition of amorphous layers on the glass and polymer substrates, respectively, and on top of crystalline silicon integrated circuits without any damage to the circuits below [5]. At appropriate RF power, gas flows, chamber pressure, and substrate temperature in PECVD, hydrogen atoms are introduced into the thin film to passivate the silicon dangling bonds (DBs) and remove a part of (metastable) defect states from the forbidden band gap.…”

Section: Introductionmentioning

confidence: 99%

a-Si:H p-i-n Photodiode as a Biosensor

Gradišnik¹,

Gumbarević²

2018

Photodetectors [Working Title]

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The p-in a-Si:H photodiode is a promising device as a transducer in biosensors. The native and light-induced localized state density and energy distribution in the energy gap of a-Si:H have a large effect on the photoconductivity of thin-film photodiodes. Depending on their nature, they play a crucial role in trapping and recombination processes and consequently influence the photodiode capacitance. The optical bias dependence of modulated photocurrent, OBMPC, method using the blue LED light is applied to clarify the nature and energy distribution of the energy gap density of states and their influence on the photodiode capacitance, from photodiodes transient response. It is observed that the deep defect states of the i-layer contribute to the capacitance at various bias voltages. Also, the capacitance achieves the upper limit around the built-in potential. Based on this method and obtained results, the a-Si:H p-in photodiode is used as a biosensor transducer in the detection of mammalian cell chemiluminescence.

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“…The development of a photo-detection system being compatible with various MEMS technologies would form an ideal platform for the fabrication of integrated measurement systems for many different applications. Current approaches in the field of opto-electronic sensors tend to miniaturize the imaging system by using small-pixel CMOS/CCD detectors [2], micro-PD/LED arrays [3] or thin film on ASIC (TFA) technology based on the deposition of a photo-sensitive layer on top of a read out integrated circuit [4], [5].…”

Section: Introductionmentioning

confidence: 99%

An amorphous silicon photodiode array for glass-based optical MEMS application

et al. 2009

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Abstract-A highly sensitive photo-detector array deposited on a glass substrate with an optional integrated optical filter have been presented. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less than 1e-10 A/cm 2 for -3V polarization and a maximal quantum efficiency of 80% near 580 nm. The prototype was encapsulated and successfully tested optically. It has a fill factor of only 44% which, however, can be easily increased to 90% using flip-chip bonding to an integrated electronic circuit for signal conditioning. The sensor is biocompatible and can be integrated with other glass-based and glass compatible micro-fabricated devices such as optical, microfluidic, lab-on-a-chip, chemical and biological devices in which photo-detection is a desired feature.

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Hydrogenated Amorphous Silicon Sensors Based on Thin Film on ASIC Technology

Abstract: -

Cited by 6 publications

References 15 publications

Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration

Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration

a-Si:H p-i-n Photodiode as a Biosensor

An amorphous silicon photodiode array for glass-based optical MEMS application

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